Integrating Graphene/MoS2 Heterostructure with SiNx Waveguide for Visible Light Detection at 532 nm Wavelength

Zeru Wu, Tianyou Zhang, Yujie Chen*, Yanfeng Zhang, Siyuan Yu

*Corresponding author for this work

Research output: Contribution to journalLetter (Academic Journal)peer-review

2 Citations (Scopus)


In this work, a silicon nitride waveguide-integrated photodetector based on a transferred graphene/MoS2 heterostructure has been reported, where photo-generated electron–hole pairs are produced in the CVD-grown MoS2 monolayer and rapidly separated at the heterostructure interface, followed by electrons continuously transferring to the graphene layer induced by an effective built-in electrical field. By tuning the back-gate voltage to control the Fermi-level in graphene layer, a competitive photoresponsivity of 440 mA W−1 at 532 nm is achieved. Furthermore, these exhibit a photoresponse rate with a rise time of 80 ms and a fall time of 30 ms. It is believed that the 2D heterostructure has potentials for future applications in integrated optoelectronic circuits.

Original languageEnglish
Article number1800338
Number of pages6
JournalPhysica Status Solidi - Rapid Research Letters
Issue number2
Publication statusPublished - 8 Feb 2019


  • graphene
  • MoS
  • photodetectors
  • silicon nitride
  • waveguides

Fingerprint Dive into the research topics of 'Integrating Graphene/MoS<sub>2</sub> Heterostructure with SiN<sub>x</sub> Waveguide for Visible Light Detection at 532 nm Wavelength'. Together they form a unique fingerprint.

Cite this