Intentionally Carbon-Doped AlGaN/GaN HEMTs: Necessity for Vertical Leakage Paths

Michael J Uren; Marco Silvestri; Markus Caesar; Godefridus Hurkx; Jeroen Croon; Jan Šonský; Martin Kuball

doi:10.1109/LED.2013.2297626

Intentionally Carbon-Doped AlGaN/GaN HEMTs: Necessity for Vertical Leakage Paths

Michael J Uren, Marco Silvestri, Markus Caesar, Godefridus Hurkx, Jeroen Croon, Jan Šonský, Martin Kuball

School of Physics

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Abstract

Dynamic ON-resistance (RON) in heavily carbon doped AlGaN/GaN high electron mobility transistors is shown to be associated with the semi-insulating carbon-doped buffer region. Using transient substrate bias, differences in RON dispersion between transistors fabricated on nominally identical epilayer structures were found to be due to the band-to-band leakage resistance between the buffer and the 2DEG. Contrary to normal expectations, suppression of dynamic RON dispersion in these devices requires a high density of active defects to increase reverse leakage current through the depletion region allowing the floating weakly p-type buffer to remain in equilibrium with the 2DEG.

Original language	English
Pages (from-to)	327-329
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	35
Issue number	3
DOIs	https://doi.org/10.1109/LED.2013.2297626
Publication status	Published - Mar 2014

Research Groups and Themes

CDTR

Keywords

Dynamic ON-resistance
current collapse
HEMT
carbon doping
defects

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10.1109/LED.2013.2297626

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Kuball, M. H. H. (Principal Investigator)
1/10/12 → 1/10/14
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Professor Martin H H Kuball
- Martin.Kuballbristol.acuk
- School of Physics - Professor of Physics (Royal Society Wolfson Research Merit Award Holder)
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Professor Michael J Uren
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Cite this

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title = "Intentionally Carbon-Doped AlGaN/GaN HEMTs: Necessity for Vertical Leakage Paths",

abstract = "Dynamic ON-resistance (RON) in heavily carbon doped AlGaN/GaN high electron mobility transistors is shown to be associated with the semi-insulating carbon-doped buffer region. Using transient substrate bias, differences in RON dispersion between transistors fabricated on nominally identical epilayer structures were found to be due to the band-to-band leakage resistance between the buffer and the 2DEG. Contrary to normal expectations, suppression of dynamic RON dispersion in these devices requires a high density of active defects to increase reverse leakage current through the depletion region allowing the floating weakly p-type buffer to remain in equilibrium with the 2DEG.",

keywords = "Dynamic ON-resistance, current collapse, HEMT, carbon doping, defects",

author = "Uren, {Michael J} and Marco Silvestri and Markus Caesar and Godefridus Hurkx and Jeroen Croon and Jan {\v S}onsk{\'y} and Martin Kuball",

year = "2014",

month = mar,

doi = "10.1109/LED.2013.2297626",

language = "English",

volume = "35",

pages = "327--329",

journal = "IEEE Electron Device Letters",

issn = "0741-3106",

publisher = "Institute of Electrical and Electronics Engineers (IEEE)",

number = "3",

}

TY - JOUR

T1 - Intentionally Carbon-Doped AlGaN/GaN HEMTs

T2 - Necessity for Vertical Leakage Paths

AU - Uren, Michael J

AU - Silvestri, Marco

AU - Caesar, Markus

AU - Hurkx, Godefridus

AU - Croon, Jeroen

AU - Šonský, Jan

AU - Kuball, Martin

PY - 2014/3

Y1 - 2014/3

N2 - Dynamic ON-resistance (RON) in heavily carbon doped AlGaN/GaN high electron mobility transistors is shown to be associated with the semi-insulating carbon-doped buffer region. Using transient substrate bias, differences in RON dispersion between transistors fabricated on nominally identical epilayer structures were found to be due to the band-to-band leakage resistance between the buffer and the 2DEG. Contrary to normal expectations, suppression of dynamic RON dispersion in these devices requires a high density of active defects to increase reverse leakage current through the depletion region allowing the floating weakly p-type buffer to remain in equilibrium with the 2DEG.

AB - Dynamic ON-resistance (RON) in heavily carbon doped AlGaN/GaN high electron mobility transistors is shown to be associated with the semi-insulating carbon-doped buffer region. Using transient substrate bias, differences in RON dispersion between transistors fabricated on nominally identical epilayer structures were found to be due to the band-to-band leakage resistance between the buffer and the 2DEG. Contrary to normal expectations, suppression of dynamic RON dispersion in these devices requires a high density of active defects to increase reverse leakage current through the depletion region allowing the floating weakly p-type buffer to remain in equilibrium with the 2DEG.

KW - Dynamic ON-resistance

KW - current collapse

KW - HEMT

KW - carbon doping

KW - defects

U2 - 10.1109/LED.2013.2297626

DO - 10.1109/LED.2013.2297626

M3 - Article (Academic Journal)

SN - 0741-3106

VL - 35

SP - 327

EP - 329

JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

IS - 3

ER -

Intentionally Carbon-Doped AlGaN/GaN HEMTs: Necessity for Vertical Leakage Paths

Abstract

Research Groups and Themes

Keywords

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Professor Martin H H Kuball

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