Intentionally Carbon-Doped AlGaN/GaN HEMTs: Necessity for Vertical Leakage Paths

Michael J Uren, Marco Silvestri, Markus Caesar, Godefridus Hurkx, Jeroen Croon, Jan Šonský, Martin Kuball

Research output: Contribution to journalArticle (Academic Journal)peer-review

84 Citations (Scopus)
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Abstract

Dynamic ON-resistance (RON) in heavily carbon doped AlGaN/GaN high electron mobility transistors is shown to be associated with the semi-insulating carbon-doped buffer region. Using transient substrate bias, differences in RON dispersion between transistors fabricated on nominally identical epilayer structures were found to be due to the band-to-band leakage resistance between the buffer and the 2DEG. Contrary to normal expectations, suppression of dynamic RON dispersion in these devices requires a high density of active defects to increase reverse leakage current through the depletion region allowing the floating weakly p-type buffer to remain in equilibrium with the 2DEG.
Original languageEnglish
Pages (from-to)327-329
Number of pages3
JournalIEEE Electron Device Letters
Volume35
Issue number3
DOIs
Publication statusPublished - Mar 2014

Structured keywords

  • CDTR

Keywords

  • Dynamic ON-resistance
  • current collapse
  • HEMT
  • carbon doping
  • defects

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