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Abstract
Dynamic ON-resistance (RON) in heavily carbon doped AlGaN/GaN high electron mobility transistors is shown to be associated with the semi-insulating carbon-doped buffer region. Using transient substrate bias, differences in RON dispersion between transistors fabricated on nominally identical epilayer structures were found to be due to the band-to-band leakage resistance between the buffer and the 2DEG. Contrary to normal expectations, suppression of dynamic RON dispersion in these devices requires a high density of active defects to increase reverse leakage current through the depletion region allowing the floating weakly p-type buffer to remain in equilibrium with the 2DEG.
Original language | English |
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Pages (from-to) | 327-329 |
Number of pages | 3 |
Journal | IEEE Electron Device Letters |
Volume | 35 |
Issue number | 3 |
DOIs | |
Publication status | Published - Mar 2014 |
Research Groups and Themes
- CDTR
Keywords
- Dynamic ON-resistance
- current collapse
- HEMT
- carbon doping
- defects
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Dive into the research topics of 'Intentionally Carbon-Doped AlGaN/GaN HEMTs: Necessity for Vertical Leakage Paths'. Together they form a unique fingerprint.Projects
- 1 Finished
Profiles
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Professor Martin H H Kuball
- School of Physics - Professor of Physics (Royal Society Wolfson Research Merit Award Holder)
Person: Academic
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Professor Michael J Uren
- School of Physics - Honorary Professor
Person: Honorary and Visiting Academic