| Translated title of the contribution | Interdiffusion-assisted dislocation migrationin GaAs/GaAlAs layers grown on (001)Si |
|---|---|
| Original language | English |
| Pages (from-to) | 1335 - 1344 |
| Number of pages | 9 |
| Journal | Philosophical Magazine |
| Volume | A63 |
| Publication status | Published - 1991 |
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