Interface State Artefact in Long Gate-Length AlGaN/GaN HEMTs

W. M. Waller; S. Karboyan; M. J. Uren; K. B. Lee; P. A. Houston; D. J. Wallis; I. Guiney; C. J. Humphreys; M. Kuball

doi:10.1109/ted.2015.2444911

Interface State Artefact in Long Gate-Length AlGaN/GaN HEMTs

W. M. Waller, S. Karboyan, M. J. Uren, K. B. Lee, P. A. Houston, D. J. Wallis, I. Guiney, C. J. Humphreys, M. Kuball

School of Physics

Research output: Contribution to journal › Article (Academic Journal) › peer-review

21 Citations (Scopus)

Abstract

Dispersion in capacitance and conductance measurements in AlGaN/GaN high-electron mobility transistors is typically interpreted as resulting from interface states. Measurements on varying gate-length devices and a model of an interface-trap-free device are used to demonstrate that the distributed-resistance-induced dispersion is significant for 1-MHz measurements if the gate length exceeds ~10um. Hence, interface state density measurements using the conductance technique need to use shorter gate-length devices in order to avoid this artefact.

Original language	English
Pages (from-to)	2464-2469
Number of pages	6
Journal	IEEE Transactions on Electron Devices
Volume	62
Issue number	8
DOIs	https://doi.org/10.1109/ted.2015.2444911
Publication status	Published - Aug 2015

Research Groups and Themes

CDTR

Keywords

Aluminum gallium nitride Capacitance Gallium nitride HEMTs Logic gates MODFETs Resistance AlGaN/GaN high-electron mobility transistor (HEMT) conductance method interface traps series resistance series resistance.

Access to Document

10.1109/ted.2015.2444911

Handle.net

Persistent link

Silicon Compatible GaN Power Electronics
Kuball, M. H. H. (Principal Investigator)
1/03/13 → 31/08/18
Project: Research

Cite this

@article{cc2c86a71e1c4a00a62b291ec22c04c5,

title = "Interface State Artefact in Long Gate-Length AlGaN/GaN HEMTs",

abstract = "Dispersion in capacitance and conductance measurements in AlGaN/GaN high-electron mobility transistors is typically interpreted as resulting from interface states. Measurements on varying gate-length devices and a model of an interface-trap-free device are used to demonstrate that the distributed-resistance-induced dispersion is significant for 1-MHz measurements if the gate length exceeds ~10um. Hence, interface state density measurements using the conductance technique need to use shorter gate-length devices in order to avoid this artefact.",

keywords = "Aluminum gallium nitride Capacitance Gallium nitride HEMTs Logic gates MODFETs Resistance AlGaN/GaN high-electron mobility transistor (HEMT) conductance method interface traps series resistance series resistance.",

author = "Waller, {W. M.} and S. Karboyan and Uren, {M. J.} and Lee, {K. B.} and Houston, {P. A.} and Wallis, {D. J.} and I. Guiney and Humphreys, {C. J.} and M. Kuball",

year = "2015",

month = aug,

doi = "10.1109/ted.2015.2444911",

language = "English",

volume = "62",

pages = "2464--2469",

journal = "IEEE Transactions on Electron Devices",

issn = "0018-9383",

publisher = "Institute of Electrical and Electronics Engineers (IEEE)",

number = "8",

}

TY - JOUR

T1 - Interface State Artefact in Long Gate-Length AlGaN/GaN HEMTs

AU - Waller, W. M.

AU - Karboyan, S.

AU - Uren, M. J.

AU - Lee, K. B.

AU - Houston, P. A.

AU - Wallis, D. J.

AU - Guiney, I.

AU - Humphreys, C. J.

AU - Kuball, M.

PY - 2015/8

Y1 - 2015/8

N2 - Dispersion in capacitance and conductance measurements in AlGaN/GaN high-electron mobility transistors is typically interpreted as resulting from interface states. Measurements on varying gate-length devices and a model of an interface-trap-free device are used to demonstrate that the distributed-resistance-induced dispersion is significant for 1-MHz measurements if the gate length exceeds ~10um. Hence, interface state density measurements using the conductance technique need to use shorter gate-length devices in order to avoid this artefact.

AB - Dispersion in capacitance and conductance measurements in AlGaN/GaN high-electron mobility transistors is typically interpreted as resulting from interface states. Measurements on varying gate-length devices and a model of an interface-trap-free device are used to demonstrate that the distributed-resistance-induced dispersion is significant for 1-MHz measurements if the gate length exceeds ~10um. Hence, interface state density measurements using the conductance technique need to use shorter gate-length devices in order to avoid this artefact.

KW - Aluminum gallium nitride Capacitance Gallium nitride HEMTs Logic gates MODFETs Resistance AlGaN/GaN high-electron mobility transistor (HEMT) conductance method interface traps series resistance series resistance.

U2 - 10.1109/ted.2015.2444911

DO - 10.1109/ted.2015.2444911

M3 - Article (Academic Journal)

SN - 0018-9383

VL - 62

SP - 2464

EP - 2469

JO - IEEE Transactions on Electron Devices

JF - IEEE Transactions on Electron Devices

IS - 8

ER -

Interface State Artefact in Long Gate-Length AlGaN/GaN HEMTs

Abstract

Research Groups and Themes

Keywords

Access to Document

Handle.net

Fingerprint

Projects

Silicon Compatible GaN Power Electronics

Cite this