Projects per year
Dispersion in capacitance and conductance measurements in AlGaN/GaN high-electron mobility transistors is typically interpreted as resulting from interface states. Measurements on varying gate-length devices and a model of an interface-trap-free device are used to demonstrate that the distributed-resistance-induced dispersion is significant for 1-MHz measurements if the gate length exceeds ~10um. Hence, interface state density measurements using the conductance technique need to use shorter gate-length devices in order to avoid this artefact.
- Aluminum gallium nitride Capacitance Gallium nitride HEMTs Logic gates MODFETs Resistance AlGaN/GaN high-electron mobility transistor (HEMT) conductance method interface traps series resistance series resistance.