Interface State Artefact in Long Gate-Length AlGaN/GaN HEMTs

W. M. Waller, S. Karboyan, M. J. Uren, K. B. Lee, P. A. Houston, D. J. Wallis, I. Guiney, C. J. Humphreys, M. Kuball

Research output: Contribution to journalArticle (Academic Journal)peer-review

15 Citations (Scopus)


Dispersion in capacitance and conductance measurements in AlGaN/GaN high-electron mobility transistors is typically interpreted as resulting from interface states. Measurements on varying gate-length devices and a model of an interface-trap-free device are used to demonstrate that the distributed-resistance-induced dispersion is significant for 1-MHz measurements if the gate length exceeds ~10um. Hence, interface state density measurements using the conductance technique need to use shorter gate-length devices in order to avoid this artefact.
Original languageEnglish
Pages (from-to)2464-2469
Number of pages6
JournalIEEE Transactions on Electron Devices
Issue number8
Publication statusPublished - Aug 2015

Structured keywords

  • CDTR


  • Aluminum gallium nitride Capacitance Gallium nitride HEMTs Logic gates MODFETs Resistance AlGaN/GaN high-electron mobility transistor (HEMT) conductance method interface traps series resistance series resistance.

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