Interfacial mechanism in the anomalous Hall effect of Co/Bi2O3 bilayers

Edurne Sagasta, Juan Borge, Luis Esteban, Yasutomo Omori, Martin Gradhand, YoshiChika Otani, Luis E. Hueso, Fèlix Casanova

Research output: Contribution to journalArticle (Academic Journal)peer-review

5 Citations (Scopus)
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Abstract

Oxide interfaces are a source of spin-orbit coupling which can lead to novel spin-to-charge conversion effects. In this work the contribution of the Bi2O3 interface to the anomalous Hall effect of Co is experimentally studied in Co/Bi2O3 bilayers. We evidence a variation of 40% in the AHE of Co when a Bi2O3 capping layer is added to the ferromagnet. This strong variation is attributed to an additional source of asymmetric transport in Co/Bi2O3 bilayers that originates from the Co/Bi2O3 interface and contributes to the skew scattering.
Original languageEnglish
Article number100407
Number of pages5
JournalPhysical Review B
Volume100
DOIs
Publication statusPublished - 18 Sept 2019

Keywords

  • cond-mat.mes-hall

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  • HPC (High Performance Computing) Facility

    Sadaf R Alam (Manager), Steven A Chapman (Manager), Polly E Eccleston (Other), Simon H Atack (Other) & D A G Williams (Manager)

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