Investigation of Repetitive Short Circuit Stress as a Degradation Metric in Symmetrical and Asymmetrical Double-Trench SiC Power MOSFETs

Renze Yu; Saeed Jahdi; Phil H Mellor; Juefei Yang; Chengjun Shen; Li Liu; Olayiwola Alatise; Jose Ortiz-Gonzalez

doi:10.1109/WiPDAEurope55971.2022.9936284

Investigation of Repetitive Short Circuit Stress as a Degradation Metric in Symmetrical and Asymmetrical Double-Trench SiC Power MOSFETs

Renze Yu
, Saeed Jahdi
, Phil H Mellor
, Juefei Yang
, Chengjun Shen
, Li Liu
, Olayiwola Alatise
, Jose Ortiz-Gonzalez

Research output: Chapter in Book/Report/Conference proceeding › Conference Contribution (Conference Proceeding)

5 Citations (Scopus)

143 Downloads (Pure)

Abstract

In this paper, the reliability of planar, symmetrical, and asymmetrical SiC MOSFET is compared under repetitive short circuit shocks. Both static and dynamic parameters are tested after certain cycles to investigate the degradation pattern of the devices. It has been found out that the planar device has the highest reliability and is barely degraded for almost all parameters after 5000 cycles. The symmetrical device has the lowest reliability, which shows degradation after 50 cycles and ultimately fails after 141 cycles. The asymmetrical device shows significant degradation after 100 cycles and fails to turn-on/off after 1000 cycles. For both symmetrical and asymmetrical devices, the degradation is directly linked to the damage of the gate oxide.

Original language	English
Title of host publication	2022 IEEE Workshop on Wide Bandgap Power Devices and Applications in Europe (WiPDA Europe)
Place of Publication	Coventry, United Kingdom
Publisher	Institute of Electrical and Electronics Engineers (IEEE)
Number of pages	6
ISBN (Electronic)	9781665488143
ISBN (Print)	9781665488150
DOIs	https://doi.org/10.1109/WiPDAEurope55971.2022.9936284
Publication status	Published - 8 Nov 2022
Event	2022 IEEE Workshop on Wide Bandgap Power Devices and Applications in Europe (WiPDA Europe) - Duration: 18 Sept 2022 → 20 Sept 2022

Conference

Conference	2022 IEEE Workshop on Wide Bandgap Power Devices and Applications in Europe (WiPDA Europe)
Period	18/09/22 → 20/09/22

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Publisher Copyright:
© 2022 IEEE.

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10.1109/WiPDAEurope55971.2022.9936284

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This is the accepted author manuscript (AAM). The final published version (version of record) is available online via IEEE at 10.1109/WiPDAEurope55971.2022.9936284. Please refer to any applicable terms of use of the publisher.
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Failure and Degradation Analysis of Planar and Trench SiC MOSFETs Under Repetitive Short Circuit Stress
Yu, R. (Author), Jahdi, S. (Supervisor) & Mellor, P. (Supervisor), 17 Jun 2025
Student thesis: Doctoral Thesis › Doctor of Philosophy (PhD)

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Yu, R., Jahdi, S., Mellor, P. H., Yang, J., Shen, C., Liu, L., Alatise, O., & Ortiz-Gonzalez, J. (2022). Investigation of Repetitive Short Circuit Stress as a Degradation Metric in Symmetrical and Asymmetrical Double-Trench SiC Power MOSFETs. In 2022 IEEE Workshop on Wide Bandgap Power Devices and Applications in Europe (WiPDA Europe) Institute of Electrical and Electronics Engineers (IEEE). https://doi.org/10.1109/WiPDAEurope55971.2022.9936284

Yu, Renze ; Jahdi, Saeed ; Mellor, Phil H et al. / Investigation of Repetitive Short Circuit Stress as a Degradation Metric in Symmetrical and Asymmetrical Double-Trench SiC Power MOSFETs. 2022 IEEE Workshop on Wide Bandgap Power Devices and Applications in Europe (WiPDA Europe). Coventry, United Kingdom : Institute of Electrical and Electronics Engineers (IEEE), 2022.

@inproceedings{ea4ebd82925d4c5199c06c8b77ce9914,

title = "Investigation of Repetitive Short Circuit Stress as a Degradation Metric in Symmetrical and Asymmetrical Double-Trench SiC Power MOSFETs",

abstract = "In this paper, the reliability of planar, symmetrical, and asymmetrical SiC MOSFET is compared under repetitive short circuit shocks. Both static and dynamic parameters are tested after certain cycles to investigate the degradation pattern of the devices. It has been found out that the planar device has the highest reliability and is barely degraded for almost all parameters after 5000 cycles. The symmetrical device has the lowest reliability, which shows degradation after 50 cycles and ultimately fails after 141 cycles. The asymmetrical device shows significant degradation after 100 cycles and fails to turn-on/off after 1000 cycles. For both symmetrical and asymmetrical devices, the degradation is directly linked to the damage of the gate oxide.",

author = "Renze Yu and Saeed Jahdi and Mellor, \{Phil H\} and Juefei Yang and Chengjun Shen and Li Liu and Olayiwola Alatise and Jose Ortiz-Gonzalez",

note = "Publisher Copyright: {\textcopyright} 2022 IEEE.; 2022 IEEE Workshop on Wide Bandgap Power Devices and Applications in Europe (WiPDA Europe) ; Conference date: 18-09-2022 Through 20-09-2022",

year = "2022",

month = nov,

day = "8",

doi = "10.1109/WiPDAEurope55971.2022.9936284",

language = "English",

isbn = "9781665488150",

booktitle = "2022 IEEE Workshop on Wide Bandgap Power Devices and Applications in Europe (WiPDA Europe)",

publisher = "Institute of Electrical and Electronics Engineers (IEEE)",

address = "United States",

}

Yu, R , Jahdi, S , Mellor, PH, Yang, J, Shen, C, Liu, L, Alatise, O & Ortiz-Gonzalez, J 2022, Investigation of Repetitive Short Circuit Stress as a Degradation Metric in Symmetrical and Asymmetrical Double-Trench SiC Power MOSFETs. in 2022 IEEE Workshop on Wide Bandgap Power Devices and Applications in Europe (WiPDA Europe). Institute of Electrical and Electronics Engineers (IEEE), Coventry, United Kingdom, 2022 IEEE Workshop on Wide Bandgap Power Devices and Applications in Europe (WiPDA Europe), 18/09/22. https://doi.org/10.1109/WiPDAEurope55971.2022.9936284

Investigation of Repetitive Short Circuit Stress as a Degradation Metric in Symmetrical and Asymmetrical Double-Trench SiC Power MOSFETs. / Yu, Renze ; Jahdi, Saeed ; Mellor, Phil H et al.
2022 IEEE Workshop on Wide Bandgap Power Devices and Applications in Europe (WiPDA Europe). Coventry, United Kingdom: Institute of Electrical and Electronics Engineers (IEEE), 2022.

Research output: Chapter in Book/Report/Conference proceeding › Conference Contribution (Conference Proceeding)

TY - GEN

T1 - Investigation of Repetitive Short Circuit Stress as a Degradation Metric in Symmetrical and Asymmetrical Double-Trench SiC Power MOSFETs

AU - Yu, Renze

AU - Jahdi, Saeed

AU - Mellor, Phil H

AU - Yang, Juefei

AU - Shen, Chengjun

AU - Liu, Li

AU - Alatise, Olayiwola

AU - Ortiz-Gonzalez, Jose

PY - 2022/11/8

Y1 - 2022/11/8

N2 - In this paper, the reliability of planar, symmetrical, and asymmetrical SiC MOSFET is compared under repetitive short circuit shocks. Both static and dynamic parameters are tested after certain cycles to investigate the degradation pattern of the devices. It has been found out that the planar device has the highest reliability and is barely degraded for almost all parameters after 5000 cycles. The symmetrical device has the lowest reliability, which shows degradation after 50 cycles and ultimately fails after 141 cycles. The asymmetrical device shows significant degradation after 100 cycles and fails to turn-on/off after 1000 cycles. For both symmetrical and asymmetrical devices, the degradation is directly linked to the damage of the gate oxide.

AB - In this paper, the reliability of planar, symmetrical, and asymmetrical SiC MOSFET is compared under repetitive short circuit shocks. Both static and dynamic parameters are tested after certain cycles to investigate the degradation pattern of the devices. It has been found out that the planar device has the highest reliability and is barely degraded for almost all parameters after 5000 cycles. The symmetrical device has the lowest reliability, which shows degradation after 50 cycles and ultimately fails after 141 cycles. The asymmetrical device shows significant degradation after 100 cycles and fails to turn-on/off after 1000 cycles. For both symmetrical and asymmetrical devices, the degradation is directly linked to the damage of the gate oxide.

U2 - 10.1109/WiPDAEurope55971.2022.9936284

DO - 10.1109/WiPDAEurope55971.2022.9936284

M3 - Conference Contribution (Conference Proceeding)

SN - 9781665488150

BT - 2022 IEEE Workshop on Wide Bandgap Power Devices and Applications in Europe (WiPDA Europe)

PB - Institute of Electrical and Electronics Engineers (IEEE)

CY - Coventry, United Kingdom

T2 - 2022 IEEE Workshop on Wide Bandgap Power Devices and Applications in Europe (WiPDA Europe)

Y2 - 18 September 2022 through 20 September 2022

ER -

Yu R , Jahdi S , Mellor PH, Yang J, Shen C, Liu L et al. Investigation of Repetitive Short Circuit Stress as a Degradation Metric in Symmetrical and Asymmetrical Double-Trench SiC Power MOSFETs. In 2022 IEEE Workshop on Wide Bandgap Power Devices and Applications in Europe (WiPDA Europe). Coventry, United Kingdom: Institute of Electrical and Electronics Engineers (IEEE). 2022 doi: 10.1109/WiPDAEurope55971.2022.9936284

Investigation of Repetitive Short Circuit Stress as a Degradation Metric in Symmetrical and Asymmetrical Double-Trench SiC Power MOSFETs

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Student theses

Failure and Degradation Analysis of Planar and Trench SiC MOSFETs Under Repetitive Short Circuit Stress

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