Investigation of temperature sensitivity of GaInNAs/GaAs quantum well material - after ion radiation

YN Qiu; G Papaioannou; JM Pozo; JM Rorison; M Saarinen; J Konttinen; J Viheriala; P Leinonen; T Jouhti; M Pessa

Investigation of temperature sensitivity of GaInNAs/GaAs quantum well material - after ion radiation

YN Qiu
, G Papaioannou
, JM Pozo
, JM Rorison
, M Saarinen
, J Konttinen
, J Viheriala
, P Leinonen
, T Jouhti
, M Pessa

Research output: Chapter in Book/Report/Conference proceeding › Conference Contribution (Conference Proceeding)

Translated title of the contribution	Investigation of temperature sensitivity of GaInNAs/GaAs quantum well material - after ion radiation
Original language	English
Title of host publication	UK Compound Semiconductor, Sheffield
Publication status	Published - 2006

Research Groups and Themes

Photonics and Quantum

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@inproceedings{543580e4b6db4f7388ab4ebfeb04b8f7,

title = "Investigation of temperature sensitivity of GaInNAs/GaAs quantum well material - after ion radiation",

author = "YN Qiu and G Papaioannou and JM Pozo and JM Rorison and M Saarinen and J Konttinen and J Viheriala and P Leinonen and T Jouhti and M Pessa",

year = "2006",

language = "English",

booktitle = "UK Compound Semiconductor, Sheffield",

}

TY - GEN

T1 - Investigation of temperature sensitivity of GaInNAs/GaAs quantum well material - after ion radiation

AU - Qiu, YN

AU - Papaioannou, G

AU - Pozo, JM

AU - Rorison, JM

AU - Saarinen, M

AU - Konttinen, J

AU - Viheriala, J

AU - Leinonen, P

AU - Jouhti, T

AU - Pessa, M

PY - 2006

Y1 - 2006

M3 - Conference Contribution (Conference Proceeding)

BT - UK Compound Semiconductor, Sheffield

ER -