Investigation of the displacement threshold of Si in 4H SiC

W Sullivan, JW Steeds

Research output: Contribution to journalArticle (Academic Journal)peer-review

2 Citations (Scopus)
Translated title of the contributionInvestigation of the displacement threshold of Si in 4H SiC
Original languageEnglish
Pages (from-to)481 - 484
Number of pages4
JournalMaterials Science Forum - Silicon Carbide and Related Materials 2005
Volume527-529
Publication statusPublished - 2006

Bibliographical note

Publisher: Trans. Tech. Publications Limited
Other identifier: ID 137.222.30-94

Cite this