Investigation of the displacement threshold of Si in 4H SiC

Research output: Contribution to journal › Article (Academic Journal) › peer-review

4 Citations (Scopus)

Translated title of the contribution	Investigation of the displacement threshold of Si in 4H SiC
Original language	English
Pages (from-to)	481 - 484
Number of pages	4
Journal	Materials Science Forum - Silicon Carbide and Related Materials 2005
Volume	527-529
Publication status	Published - 2006

Publisher: Trans. Tech. Publications Limited
Other identifier: ID 137.222.30-94

Handle.net

@article{5daef73ae42c47708d2d0285e932ee1a,

title = "Investigation of the displacement threshold of Si in 4H SiC",

author = "W Sullivan and JW Steeds",

note = "Publisher: Trans. Tech. Publications Limited Other identifier: ID 137.222.30-94",

year = "2006",

language = "English",

volume = "527-529",

pages = "481 -- 484",

journal = "Materials Science Forum - Silicon Carbide and Related Materials 2005",

issn = "1662-9752",

publisher = "Trans Tech Publications Ltd",

}

TY - JOUR

T1 - Investigation of the displacement threshold of Si in 4H SiC

AU - Sullivan, W

AU - Steeds, JW

N1 - Publisher: Trans. Tech. Publications Limited Other identifier: ID 137.222.30-94

PY - 2006

Y1 - 2006

M3 - Article (Academic Journal)

SN - 1662-9752

VL - 527-529

SP - 481

EP - 484

JO - Materials Science Forum - Silicon Carbide and Related Materials 2005

JF - Materials Science Forum - Silicon Carbide and Related Materials 2005

ER -