Abstract
GaN layers were grown onto (111) GaAs by molecular beam epitaxy. Minimal band offset between
the conduction bands for GaN and GaAs materials has been suggested in the literature raising the
possibility of using GaN-on-GaAs for vertical power device applications. I-V and C-V measurements
of the GaN/GaAs heterostructures however yielded a rectifying junction, even when both sides of the
junction were heavily doped with an n-type dopant. Transmission electron microscopy analysis
further confirmed the challenge in creating a GaN/GaAs Ohmic interface by showing a large density
of dislocations in the GaN layer and suggesting roughening of the GaN/GaAs interface due to etching
of the GaAs by the nitrogen plasma, diffusion of nitrogen or melting of Ga into the GaAs substrate.
the conduction bands for GaN and GaAs materials has been suggested in the literature raising the
possibility of using GaN-on-GaAs for vertical power device applications. I-V and C-V measurements
of the GaN/GaAs heterostructures however yielded a rectifying junction, even when both sides of the
junction were heavily doped with an n-type dopant. Transmission electron microscopy analysis
further confirmed the challenge in creating a GaN/GaAs Ohmic interface by showing a large density
of dislocations in the GaN layer and suggesting roughening of the GaN/GaAs interface due to etching
of the GaAs by the nitrogen plasma, diffusion of nitrogen or melting of Ga into the GaAs substrate.
| Original language | English |
|---|---|
| Article number | 014502 |
| Pages (from-to) | 1 - 6 |
| Number of pages | 6 |
| Journal | Journal of Applied Physics |
| Volume | 116 |
| Issue number | 1 |
| Early online date | 3 Jul 2014 |
| DOIs | |
| Publication status | Published - 7 Jul 2014 |
Research Groups and Themes
- CDTR