Investigation of the GaN-on-GaAs interface for vertical power device applications

Janina Moereke, Michael J Uren, Sergei V. Novikov, C. Thomas Foxon, Shahrzad Hosseini Vajargah, David J. Wallis, Colin J. Humphreys, Sarah J. Haigh, Abdullah Al-Khalidi, Edward Wasige, Iain Thayne, Martin H H Kuball

Research output: Contribution to journalArticle (Academic Journal)peer-review

10 Citations (Scopus)


GaN layers were grown onto (111) GaAs by molecular beam epitaxy. Minimal band offset between
the conduction bands for GaN and GaAs materials has been suggested in the literature raising the
possibility of using GaN-on-GaAs for vertical power device applications. I-V and C-V measurements
of the GaN/GaAs heterostructures however yielded a rectifying junction, even when both sides of the
junction were heavily doped with an n-type dopant. Transmission electron microscopy analysis
further confirmed the challenge in creating a GaN/GaAs Ohmic interface by showing a large density
of dislocations in the GaN layer and suggesting roughening of the GaN/GaAs interface due to etching
of the GaAs by the nitrogen plasma, diffusion of nitrogen or melting of Ga into the GaAs substrate.
Original languageEnglish
Article number014502
Pages (from-to)1 - 6
Number of pages6
JournalJournal of Applied Physics
Issue number1
Early online date3 Jul 2014
Publication statusPublished - 7 Jul 2014

Structured keywords

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