the conduction bands for GaN and GaAs materials has been suggested in the literature raising the
possibility of using GaN-on-GaAs for vertical power device applications. I-V and C-V measurements
of the GaN/GaAs heterostructures however yielded a rectifying junction, even when both sides of the
junction were heavily doped with an n-type dopant. Transmission electron microscopy analysis
further confirmed the challenge in creating a GaN/GaAs Ohmic interface by showing a large density
of dislocations in the GaN layer and suggesting roughening of the GaN/GaAs interface due to etching
of the GaAs by the nitrogen plasma, diffusion of nitrogen or melting of Ga into the GaAs substrate.