Investigation of the Static Performance and Avalanche Reliability of High Voltage 4H-SiC Merged-PiN-Schottky Diodes

Chengjun Shen; Saeed Jahdi; Phil H Mellor; Juefei Yang; Erfan Bashar; Jose Ortiz-Gonzalez; Olayiwola Alatise

Investigation of the Static Performance and Avalanche Reliability of High Voltage 4H-SiC Merged-PiN-Schottky Diodes

Chengjun Shen, Saeed Jahdi, Phil H Mellor, Juefei Yang, Erfan Bashar, Jose Ortiz-Gonzalez, Olayiwola Alatise

Research output: Chapter in Book/Report/Conference proceeding › Conference Contribution (Conference Proceeding)

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Abstract

A comprehensive range of static measurements and UIS tests have been conducted for Silicon PiN diodes, SiC JBS diodes and SiC MPS diodes with temperatures ranging to up to 175°C. The results shows that the forward voltage of Silicon PiN diode is lower at the on-state, even at high temperatures and at high currents. Higher forward voltage and positive temperature coefficient are observed for SiC devices during the static measurements, while they outperform the Silicon devices in terms of the electrothermal ruggedness, as validated by the UIS measurements and its subsequent calculated avalanche energy and die area as measured by means of CT-Scan imaging of the devices.

Original language	English
Title of host publication	24th European Conference on Power Electronics and Applications (EPE'22 ECCE Europe)
Place of Publication	Hanover, Germany
Publisher	Institute of Electrical and Electronics Engineers (IEEE)
Number of pages	9
ISBN (Electronic)	9789075815399
ISBN (Print)	9781665487009
Publication status	Published - 17 Oct 2022
Event	24th European Conference on Power Electronics and Applications (EPE'22 ECCE Europe) - Hanover, Germany Duration: 5 Sept 2022 → 9 Sept 2022

Conference

Conference	24th European Conference on Power Electronics and Applications (EPE'22 ECCE Europe)
Abbreviated title	EPE'22 ECCE Europe
Country/Territory	Germany
City	Hanover
Period	5/09/22 → 9/09/22

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Analysis of performance of SiC bipolar semiconductor devices for grid-level converters
Shen, C. (Author), Jahdi, S. (Supervisor) & Mellor, P. (Supervisor), 5 Dec 2023
Student thesis: Doctoral Thesis › Doctor of Philosophy (PhD)

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Shen, C., Jahdi, S., Mellor, P. H., Yang, J., Bashar, E., Ortiz-Gonzalez, J., & Alatise, O. (2022). Investigation of the Static Performance and Avalanche Reliability of High Voltage 4H-SiC Merged-PiN-Schottky Diodes. In 24th European Conference on Power Electronics and Applications (EPE'22 ECCE Europe) Institute of Electrical and Electronics Engineers (IEEE). https://ieeexplore.ieee.org/document/9907751

@inproceedings{eb447be650644bd3b410255cbcdf1976,

title = "Investigation of the Static Performance and Avalanche Reliability of High Voltage 4H-SiC Merged-PiN-Schottky Diodes",

abstract = "A comprehensive range of static measurements and UIS tests have been conducted for Silicon PiN diodes, SiC JBS diodes and SiC MPS diodes with temperatures ranging to up to 175°C. The results shows that the forward voltage of Silicon PiN diode is lower at the on-state, even at high temperatures and at high currents. Higher forward voltage and positive temperature coefficient are observed for SiC devices during the static measurements, while they outperform the Silicon devices in terms of the electrothermal ruggedness, as validated by the UIS measurements and its subsequent calculated avalanche energy and die area as measured by means of CT-Scan imaging of the devices.",

author = "Chengjun Shen and Saeed Jahdi and Mellor, {Phil H} and Juefei Yang and Erfan Bashar and Jose Ortiz-Gonzalez and Olayiwola Alatise",

year = "2022",

month = oct,

day = "17",

language = "English",

isbn = "9781665487009",

booktitle = "24th European Conference on Power Electronics and Applications (EPE'22 ECCE Europe)",

publisher = "Institute of Electrical and Electronics Engineers (IEEE)",

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note = "24th European Conference on Power Electronics and Applications (EPE'22 ECCE Europe), EPE'22 ECCE Europe ; Conference date: 05-09-2022 Through 09-09-2022",

}

Shen, C, Jahdi, S , Mellor, PH, Yang, J, Bashar, E, Ortiz-Gonzalez, J & Alatise, O 2022, Investigation of the Static Performance and Avalanche Reliability of High Voltage 4H-SiC Merged-PiN-Schottky Diodes. in 24th European Conference on Power Electronics and Applications (EPE'22 ECCE Europe). Institute of Electrical and Electronics Engineers (IEEE), Hanover, Germany, 24th European Conference on Power Electronics and Applications (EPE'22 ECCE Europe), Hanover, Germany, 5/09/22. <https://ieeexplore.ieee.org/document/9907751>

Investigation of the Static Performance and Avalanche Reliability of High Voltage 4H-SiC Merged-PiN-Schottky Diodes. / Shen, Chengjun; Jahdi, Saeed ; Mellor, Phil H et al.
24th European Conference on Power Electronics and Applications (EPE'22 ECCE Europe). Hanover, Germany: Institute of Electrical and Electronics Engineers (IEEE), 2022.

Research output: Chapter in Book/Report/Conference proceeding › Conference Contribution (Conference Proceeding)

TY - GEN

T1 - Investigation of the Static Performance and Avalanche Reliability of High Voltage 4H-SiC Merged-PiN-Schottky Diodes

AU - Shen, Chengjun

AU - Jahdi, Saeed

AU - Mellor, Phil H

AU - Yang, Juefei

AU - Bashar, Erfan

AU - Ortiz-Gonzalez, Jose

AU - Alatise, Olayiwola

PY - 2022/10/17

Y1 - 2022/10/17

N2 - A comprehensive range of static measurements and UIS tests have been conducted for Silicon PiN diodes, SiC JBS diodes and SiC MPS diodes with temperatures ranging to up to 175°C. The results shows that the forward voltage of Silicon PiN diode is lower at the on-state, even at high temperatures and at high currents. Higher forward voltage and positive temperature coefficient are observed for SiC devices during the static measurements, while they outperform the Silicon devices in terms of the electrothermal ruggedness, as validated by the UIS measurements and its subsequent calculated avalanche energy and die area as measured by means of CT-Scan imaging of the devices.

AB - A comprehensive range of static measurements and UIS tests have been conducted for Silicon PiN diodes, SiC JBS diodes and SiC MPS diodes with temperatures ranging to up to 175°C. The results shows that the forward voltage of Silicon PiN diode is lower at the on-state, even at high temperatures and at high currents. Higher forward voltage and positive temperature coefficient are observed for SiC devices during the static measurements, while they outperform the Silicon devices in terms of the electrothermal ruggedness, as validated by the UIS measurements and its subsequent calculated avalanche energy and die area as measured by means of CT-Scan imaging of the devices.

M3 - Conference Contribution (Conference Proceeding)

SN - 9781665487009

BT - 24th European Conference on Power Electronics and Applications (EPE'22 ECCE Europe)

PB - Institute of Electrical and Electronics Engineers (IEEE)

CY - Hanover, Germany

T2 - 24th European Conference on Power Electronics and Applications (EPE'22 ECCE Europe)

Y2 - 5 September 2022 through 9 September 2022

ER -

Investigation of the Static Performance and Avalanche Reliability of High Voltage 4H-SiC Merged-PiN-Schottky Diodes

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Student theses

Analysis of performance of SiC bipolar semiconductor devices for grid-level converters

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