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Investigations of the co-doping of boron and lithium into CVD diamond thin films

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Investigations of the co-doping of boron and lithium into CVD diamond thin films. / Halliwell, Sarah; May, Paul; Fox, Neil; Othman, Zamir.

In: Diamond and Related Materials, Vol. 76, 06.2017, p. 115-122.

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Halliwell, Sarah ; May, Paul ; Fox, Neil ; Othman, Zamir. / Investigations of the co-doping of boron and lithium into CVD diamond thin films. In: Diamond and Related Materials. 2017 ; Vol. 76. pp. 115-122.

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@article{c0abbfa57f7c402a82947dd9e5f3a14b,
title = "Investigations of the co-doping of boron and lithium into CVD diamond thin films",
abstract = "Lithium has been incorporated into heavily boron-doped single-crystal (SCD), microcrystalline (MCD) and nanocrystalline diamond (NCD) films at concentrations up to ~2 × 1020 cm-3 using Li3N as a solid-state Li source for in-diffusion and diborane as the B source. The quality, morphology, electrical resistance and concentration of B and Li dopants present in a range of B+Li co-doped SCD, MCD and NCD films have been studied. Analysis of the SIMS depth profiles for Li enabled the diffusion constants, D, to be measured (in units of cm2 s-1) as: 2.5 × 10-15, 1.3 × 10-14 and 7.0 × 10-14 for SCD, MCD and NCD, respectively, at 1100 K. The value for D for SCD agrees closely with that in the literature, while the much larger values for the polycrystalline films provide direct evidence that Li can diffuse rapidly along or through diamond grain boundaries at elevated temperatures. If prolonged diffusion allows the Li to reach the Si substrate, the Si acts as a sink for Li absorbing large quantities and reducing its concentration in the diamond film.",
author = "Sarah Halliwell and Paul May and Neil Fox and Zamir Othman",
year = "2017",
month = "6",
doi = "10.1016/j.diamond.2017.05.001",
language = "English",
volume = "76",
pages = "115--122",
journal = "Diamond and Related Materials",
issn = "0925-9635",

}

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TY - JOUR

T1 - Investigations of the co-doping of boron and lithium into CVD diamond thin films

AU - Halliwell, Sarah

AU - May, Paul

AU - Fox, Neil

AU - Othman, Zamir

PY - 2017/6

Y1 - 2017/6

N2 - Lithium has been incorporated into heavily boron-doped single-crystal (SCD), microcrystalline (MCD) and nanocrystalline diamond (NCD) films at concentrations up to ~2 × 1020 cm-3 using Li3N as a solid-state Li source for in-diffusion and diborane as the B source. The quality, morphology, electrical resistance and concentration of B and Li dopants present in a range of B+Li co-doped SCD, MCD and NCD films have been studied. Analysis of the SIMS depth profiles for Li enabled the diffusion constants, D, to be measured (in units of cm2 s-1) as: 2.5 × 10-15, 1.3 × 10-14 and 7.0 × 10-14 for SCD, MCD and NCD, respectively, at 1100 K. The value for D for SCD agrees closely with that in the literature, while the much larger values for the polycrystalline films provide direct evidence that Li can diffuse rapidly along or through diamond grain boundaries at elevated temperatures. If prolonged diffusion allows the Li to reach the Si substrate, the Si acts as a sink for Li absorbing large quantities and reducing its concentration in the diamond film.

AB - Lithium has been incorporated into heavily boron-doped single-crystal (SCD), microcrystalline (MCD) and nanocrystalline diamond (NCD) films at concentrations up to ~2 × 1020 cm-3 using Li3N as a solid-state Li source for in-diffusion and diborane as the B source. The quality, morphology, electrical resistance and concentration of B and Li dopants present in a range of B+Li co-doped SCD, MCD and NCD films have been studied. Analysis of the SIMS depth profiles for Li enabled the diffusion constants, D, to be measured (in units of cm2 s-1) as: 2.5 × 10-15, 1.3 × 10-14 and 7.0 × 10-14 for SCD, MCD and NCD, respectively, at 1100 K. The value for D for SCD agrees closely with that in the literature, while the much larger values for the polycrystalline films provide direct evidence that Li can diffuse rapidly along or through diamond grain boundaries at elevated temperatures. If prolonged diffusion allows the Li to reach the Si substrate, the Si acts as a sink for Li absorbing large quantities and reducing its concentration in the diamond film.

U2 - 10.1016/j.diamond.2017.05.001

DO - 10.1016/j.diamond.2017.05.001

M3 - Article

VL - 76

SP - 115

EP - 122

JO - Diamond and Related Materials

JF - Diamond and Related Materials

SN - 0925-9635

ER -