Iron-induced deep-level acceptor center in GaN/AlGaN high electron mobility transistors: Energy level and cross section

M. Silvestri, M. J. Uren, M. Kuball

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Abstract

Dynamic transconductance dispersion measurements coupled with device physics simulations were used to study the deep level acceptor center in iron-doped AlGaN/GaN high electron mobility transistors (HEMT). From the extracted frequency dependent trap-conductance, an energy level 0.7 eV below the conduction band and a capture cross section of 10(-13) cm(2) were obtained. The approach presented in this work avoids the non-equilibrium electrical or optical techniques that have been used to date and extracts the device relevant trap characteristics in short channel AlGaN/GaN HEMTs. Quantitative prediction of the trap induced transconductance dispersion in HEMTs is demonstrated.
Original languageEnglish
Article number073501
Number of pages4
JournalApplied Physics Letters
Volume102
Issue number7
Early online date19 Feb 2013
DOIs
Publication statusPublished - Feb 2013

Bibliographical note

Times Cited: 0 Silvestri, Marco Uren, Michael J. Kuball, Martin

Structured keywords

  • CDTR

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