Iron-induced deep-level acceptor center in GaN/AlGaN high electron mobility transistors: Energy level and cross section

M. Silvestri; M. J. Uren; M. Kuball

doi:10.1063/1.4793196

Iron-induced deep-level acceptor center in GaN/AlGaN high electron mobility transistors: Energy level and cross section

M. Silvestri, M. J. Uren, M. Kuball

School of Physics

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Abstract

Dynamic transconductance dispersion measurements coupled with device physics simulations were used to study the deep level acceptor center in iron-doped AlGaN/GaN high electron mobility transistors (HEMT). From the extracted frequency dependent trap-conductance, an energy level 0.7 eV below the conduction band and a capture cross section of 10(-13) cm(2) were obtained. The approach presented in this work avoids the non-equilibrium electrical or optical techniques that have been used to date and extracts the device relevant trap characteristics in short channel AlGaN/GaN HEMTs. Quantitative prediction of the trap induced transconductance dispersion in HEMTs is demonstrated.

Original language	English
Article number	073501
Number of pages	4
Journal	Applied Physics Letters
Volume	102
Issue number	7
Early online date	19 Feb 2013
DOIs	https://doi.org/10.1063/1.4793196
Publication status	Published - Feb 2013

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Times Cited: 0 Silvestri, Marco Uren, Michael J. Kuball, Martin

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10.1063/1.4793196

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Copyright (2013) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Appl. Phys. Lett. 102, 073501 (2013), and may be found at http://dx.doi.org/10.1063/1.4793196.
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Novel Sub-Threshold Methodologies for GaN Electronic Devices: A Study of Device Reliability and Failure Mechanisms
Kuball, M. H. H. (Principal Investigator)
1/04/11 → 1/11/15
Project: Research

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@article{e715345895d24c8b8c05ec116d180f05,

title = "Iron-induced deep-level acceptor center in GaN/AlGaN high electron mobility transistors: Energy level and cross section",

abstract = "Dynamic transconductance dispersion measurements coupled with device physics simulations were used to study the deep level acceptor center in iron-doped AlGaN/GaN high electron mobility transistors (HEMT). From the extracted frequency dependent trap-conductance, an energy level 0.7 eV below the conduction band and a capture cross section of 10(-13) cm(2) were obtained. The approach presented in this work avoids the non-equilibrium electrical or optical techniques that have been used to date and extracts the device relevant trap characteristics in short channel AlGaN/GaN HEMTs. Quantitative prediction of the trap induced transconductance dispersion in HEMTs is demonstrated.",

author = "M. Silvestri and Uren, {M. J.} and M. Kuball",

note = "Times Cited: 0 Silvestri, Marco Uren, Michael J. Kuball, Martin",

year = "2013",

month = feb,

doi = "10.1063/1.4793196",

language = "English",

volume = "102",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics (AIP)",

number = "7",

}

TY - JOUR

T1 - Iron-induced deep-level acceptor center in GaN/AlGaN high electron mobility transistors

T2 - Energy level and cross section

AU - Silvestri, M.

AU - Uren, M. J.

AU - Kuball, M.

N1 - Times Cited: 0 Silvestri, Marco Uren, Michael J. Kuball, Martin

PY - 2013/2

Y1 - 2013/2

N2 - Dynamic transconductance dispersion measurements coupled with device physics simulations were used to study the deep level acceptor center in iron-doped AlGaN/GaN high electron mobility transistors (HEMT). From the extracted frequency dependent trap-conductance, an energy level 0.7 eV below the conduction band and a capture cross section of 10(-13) cm(2) were obtained. The approach presented in this work avoids the non-equilibrium electrical or optical techniques that have been used to date and extracts the device relevant trap characteristics in short channel AlGaN/GaN HEMTs. Quantitative prediction of the trap induced transconductance dispersion in HEMTs is demonstrated.

AB - Dynamic transconductance dispersion measurements coupled with device physics simulations were used to study the deep level acceptor center in iron-doped AlGaN/GaN high electron mobility transistors (HEMT). From the extracted frequency dependent trap-conductance, an energy level 0.7 eV below the conduction band and a capture cross section of 10(-13) cm(2) were obtained. The approach presented in this work avoids the non-equilibrium electrical or optical techniques that have been used to date and extracts the device relevant trap characteristics in short channel AlGaN/GaN HEMTs. Quantitative prediction of the trap induced transconductance dispersion in HEMTs is demonstrated.

U2 - 10.1063/1.4793196

DO - 10.1063/1.4793196

M3 - Article (Academic Journal)

SN - 0003-6951

VL - 102

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 7

M1 - 073501

ER -

Iron-induced deep-level acceptor center in GaN/AlGaN high electron mobility transistors: Energy level and cross section

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Novel Sub-Threshold Methodologies for GaN Electronic Devices: A Study of Device Reliability and Failure Mechanisms

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