Leakage mechanisms in GaN-on-GaN vertical pn diodes

B. Rackauskas; S. Dalcanale; M. J. Uren; T. Kachi; M. Kuball

doi:10.1063/1.5033436

Leakage mechanisms in GaN-on-GaN vertical pn diodes

B. Rackauskas, S. Dalcanale, M. J. Uren, T. Kachi, M. Kuball

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Abstract

Reverse bias leakage in bulk GaN-on-GaN pn diodes has been studied as a function of time. A peak was observed in the current transient and attributed to impurity band conduction along dislocations which is modulated by the field effect of charged decorating clusters. This model is consistent with reports of vacancy clustering around dislocations during growth.

Original language	English
Article number	233501
Number of pages	4
Journal	Applied Physics Letters
Volume	112
Issue number	23
DOIs	https://doi.org/10.1063/1.5033436
Publication status	Published - 4 Jun 2018

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title = "Leakage mechanisms in GaN-on-GaN vertical pn diodes",

abstract = "Reverse bias leakage in bulk GaN-on-GaN pn diodes has been studied as a function of time. A peak was observed in the current transient and attributed to impurity band conduction along dislocations which is modulated by the field effect of charged decorating clusters. This model is consistent with reports of vacancy clustering around dislocations during growth.",

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AU - Rackauskas, B.

AU - Dalcanale, S.

AU - Uren, M. J.

AU - Kachi, T.

AU - Kuball, M.

PY - 2018/6/4

Y1 - 2018/6/4

N2 - Reverse bias leakage in bulk GaN-on-GaN pn diodes has been studied as a function of time. A peak was observed in the current transient and attributed to impurity band conduction along dislocations which is modulated by the field effect of charged decorating clusters. This model is consistent with reports of vacancy clustering around dislocations during growth.

AB - Reverse bias leakage in bulk GaN-on-GaN pn diodes has been studied as a function of time. A peak was observed in the current transient and attributed to impurity band conduction along dislocations which is modulated by the field effect of charged decorating clusters. This model is consistent with reports of vacancy clustering around dislocations during growth.

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DO - 10.1063/1.5033436

M3 - Article (Academic Journal)

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JO - Applied Physics Letters

JF - Applied Physics Letters

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Leakage mechanisms in GaN-on-GaN vertical pn diodes

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B. Rackauskas et al. APL 2018

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Leakage mechanisms in GaN-on-GaN vertical pn diodes

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B. Rackauskas et al. APL 2018

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