Leakage mechanisms in GaN-on-GaN vertical pn diodes

B. Rackauskas, S. Dalcanale, M. J. Uren, T. Kachi, M. Kuball

Research output: Contribution to journalArticle (Academic Journal)peer-review

41 Citations (Scopus)
326 Downloads (Pure)


Reverse bias leakage in bulk GaN-on-GaN pn diodes has been studied as a function of time. A peak was observed in the current transient and attributed to impurity band conduction along dislocations which is modulated by the field effect of charged decorating clusters. This model is consistent with reports of vacancy clustering around dislocations during growth.

Original languageEnglish
Article number233501
Number of pages4
JournalApplied Physics Letters
Issue number23
Publication statusPublished - 4 Jun 2018

Structured keywords

  • CDTR


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