Learning Abilities Achieved by a Single Solid-State Atomic Switch

Tsuyoshi Hasegawa*, Takeo Ohno, Kazuya Terabe, Tohru Tsuruoka, Tomonobu Nakayama, James K. Gimzewski, Masakazu Aono

*Corresponding author for this work

Research output: Contribution to journalArticle (Academic Journal)peer-review

221 Citations (Scopus)

Abstract

Learning abilities are demonstrated using a single solid-state atomic switch, wherein the formation and dissolution of a metal filament are controlled depending on the history of prior switching events. The strength of the memorization level gradually increases when the number of input signals is increased. Once the filament forms a bridge, electrons flow in a ballistic mode and long-term memorization is achieved (see figure).

Original languageEnglish
Pages (from-to)1831-1834
Number of pages5
JournalAdvanced Materials
Volume22
Issue number16
Early online date9 Feb 2010
DOIs
Publication statusPublished - 22 Apr 2010

Keywords

  • ELECTROCHEMICAL REACTION
  • MEMORIES

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