Abstract
Learning abilities are demonstrated using a single solid-state atomic switch, wherein the formation and dissolution of a metal filament are controlled depending on the history of prior switching events. The strength of the memorization level gradually increases when the number of input signals is increased. Once the filament forms a bridge, electrons flow in a ballistic mode and long-term memorization is achieved (see figure).
Original language | English |
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Pages (from-to) | 1831-1834 |
Number of pages | 5 |
Journal | Advanced Materials |
Volume | 22 |
Issue number | 16 |
Early online date | 9 Feb 2010 |
DOIs | |
Publication status | Published - 22 Apr 2010 |
Keywords
- ELECTROCHEMICAL REACTION
- MEMORIES