Original language | English |
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Title of host publication | Reliability Physics Symposium (IRPS), 2013 IEEE International |
Pages | SE-8 |
Publication status | Published - 2013 |
Length and fin number dependence of ionizing radiation-induced degradation in bulk FinFETs
I Chatterjee, E.X. Zhang, B.L. Bhuva, D.M. Fleetwood, Y.-P. Fang, A. Oates
Research output: Chapter in Book/Report/Conference proceeding › Conference Contribution (Conference Proceeding)
16
Citations
(Scopus)