Length and fin number dependence of ionizing radiation-induced degradation in bulk FinFETs

I Chatterjee, E.X. Zhang, B.L. Bhuva, D.M. Fleetwood, Y.-P. Fang, A. Oates

Research output: Chapter in Book/Report/Conference proceedingConference Contribution (Conference Proceeding)

9 Citations (Scopus)
Original languageEnglish
Title of host publicationReliability Physics Symposium (IRPS), 2013 IEEE International
Publication statusPublished - 2013

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