Lifetime reliability analysis of complementary resistive switches under threshold and doping interface speed variations

Complementary resistive switching (CRS) memristor is an emerging nonvolatile memory device that features low-sneak path current compared to traditional memristors. Despite its advantages, threshold voltage and doping interface drift speed variations over time are major concerns for CRS memory devices. In this paper, we will demonstrate that these variations can significantly reduce the CRS lifetime reliability in terms of number of memory operations that can be performed. Based on such demonstrations, comprehensive theoretical and empirical studies are carried out using H-Spice based simulations to investigate the impact of biasing and threshold voltages on CRS lifetime reliability. Underpinning these studies, a novel CRS lifetime relationship is proposed and extensively validated through further simulations.