Linearity enhancement of GaN HEMTs under complex modulated excitations by optimizing the baseband impedance environment

M Akmal, J Lees, S Ben Smida, KA Morris, JP McGeehan, MA Beach, PJ Tasker, J Benedikt

Research output: Chapter in Book/Report/Conference proceeding › Conference Contribution (Conference Proceeding)

12 Citations (Scopus)

Translated title of the contribution	Linearity enhancement of GaN HEMTs under complex modulated excitations by optimizing the baseband impedance environment
Original language	English
Title of host publication	IEEE International Microwave Symposium 2011 (IMS2011), Baltimore, Maryland, USA
Publisher	Institute of Electrical and Electronics Engineers (IEEE)
Publication status	Published - Jun 2011

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Akmal, M., Lees, J., Ben Smida, S., Morris, KA., McGeehan, JP., Beach, MA., Tasker, PJ., & Benedikt, J. (2011). Linearity enhancement of GaN HEMTs under complex modulated excitations by optimizing the baseband impedance environment. In IEEE International Microwave Symposium 2011 (IMS2011), Baltimore, Maryland, USA Institute of Electrical and Electronics Engineers (IEEE).

@inproceedings{83504b15b10645ecb2b61003d4f2e45b,

title = "Linearity enhancement of GaN HEMTs under complex modulated excitations by optimizing the baseband impedance environment",

author = "M Akmal and J Lees and {Ben Smida}, S and KA Morris and JP McGeehan and MA Beach and PJ Tasker and J Benedikt",

year = "2011",

month = jun,

language = "English",

booktitle = "IEEE International Microwave Symposium 2011 (IMS2011), Baltimore, Maryland, USA",

publisher = "Institute of Electrical and Electronics Engineers (IEEE)",

address = "United States",

}

Linearity enhancement of GaN HEMTs under complex modulated excitations by optimizing the baseband impedance environment. / Akmal, M; Lees, J; Ben Smida, S et al.
IEEE International Microwave Symposium 2011 (IMS2011), Baltimore, Maryland, USA. Institute of Electrical and Electronics Engineers (IEEE), 2011.

Research output: Chapter in Book/Report/Conference proceeding › Conference Contribution (Conference Proceeding)

TY - GEN

T1 - Linearity enhancement of GaN HEMTs under complex modulated excitations by optimizing the baseband impedance environment

AU - Akmal, M

AU - Lees, J

AU - Ben Smida, S

AU - Morris, KA

AU - McGeehan, JP

AU - Beach, MA

AU - Tasker, PJ

AU - Benedikt, J

PY - 2011/6

Y1 - 2011/6

M3 - Conference Contribution (Conference Proceeding)

BT - IEEE International Microwave Symposium 2011 (IMS2011), Baltimore, Maryland, USA

PB - Institute of Electrical and Electronics Engineers (IEEE)

ER -