Linearity enhancement of GaN HEMTs under complex modulated excitations by optimizing the baseband impedance environment

M Akmal, J Lees, S Ben Smida, KA Morris, JP McGeehan, MA Beach, PJ Tasker, J Benedikt

Research output: Chapter in Book/Report/Conference proceedingConference Contribution (Conference Proceeding)

11 Citations (Scopus)
Translated title of the contributionLinearity enhancement of GaN HEMTs under complex modulated excitations by optimizing the baseband impedance environment
Original languageEnglish
Title of host publicationIEEE International Microwave Symposium 2011 (IMS2011), Baltimore, Maryland, USA
PublisherInstitute of Electrical and Electronics Engineers (IEEE)
Publication statusPublished - Jun 2011

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