Link between silicon nitride stoichiometry, vertical epitaxial conductivity and current collapse in AlGaN/GaN power devices

William M. Waller, Mark Gajda, Saurabh Pandey, Johan J.T.M. Donkers, David Calton, Jeroen Croon, Serge Karboyan, Jan Šonský, Michael J. Uren, Martin Kuball

Research output: Chapter in Book/Report/Conference proceedingConference Contribution (Conference Proceeding)

2 Citations (Scopus)

Abstract

Vertical conductivity between the channel and the carbon doped GaN buffer in AlGaN/GaN HEMTs is critical for the suppression of buffer-related current collapse. Here we show for the first time that this leakage path can be controlled by changing the LPCVD SiNx passivation stoichiometry. We demonstrate a direct correlation between SiNx stoichiometry, buffer leakage, and suppression of dynamic RON dispersion.

Original languageEnglish
Title of host publicationCS MANTECH 2017 - 2017 International Conference on Compound Semiconductor Manufacturing Technology
PublisherCS Mantech
Publication statusPublished - 22 May 2017
Event2017 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2017 - Indian Wells, United States
Duration: 22 May 201725 May 2017

Conference

Conference2017 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2017
CountryUnited States
CityIndian Wells
Period22/05/1725/05/17

Structured keywords

  • CDTR

Keywords

  • Current collapse
  • GaN HEMT
  • Leakage
  • Passivation
  • Processing

Fingerprint Dive into the research topics of 'Link between silicon nitride stoichiometry, vertical epitaxial conductivity and current collapse in AlGaN/GaN power devices'. Together they form a unique fingerprint.

Cite this