Link between silicon nitride stoichiometry, vertical epitaxial conductivity and current collapse in AlGaN/GaN power devices

William M. Waller; Mark Gajda; Saurabh Pandey; Johan J.T.M. Donkers; David Calton; Jeroen Croon; Serge Karboyan; Jan Šonský; Michael J. Uren; Martin Kuball

Link between silicon nitride stoichiometry, vertical epitaxial conductivity and current collapse in AlGaN/GaN power devices

William M. Waller, Mark Gajda, Saurabh Pandey, Johan J.T.M. Donkers, David Calton, Jeroen Croon, Serge Karboyan, Jan Šonský, Michael J. Uren, Martin Kuball

Research output: Chapter in Book/Report/Conference proceeding › Conference Contribution (Conference Proceeding)

2 Citations (Scopus)

Abstract

Vertical conductivity between the channel and the carbon doped GaN buffer in AlGaN/GaN HEMTs is critical for the suppression of buffer-related current collapse. Here we show for the first time that this leakage path can be controlled by changing the LPCVD SiNx passivation stoichiometry. We demonstrate a direct correlation between SiNx stoichiometry, buffer leakage, and suppression of dynamic RON dispersion.

Original language	English
Title of host publication	CS MANTECH 2017 - 2017 International Conference on Compound Semiconductor Manufacturing Technology
Publisher	CS Mantech
Publication status	Published - 22 May 2017
Event	2017 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2017 - Indian Wells, United States Duration: 22 May 2017 → 25 May 2017

Conference

Conference	2017 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2017
Country/Territory	United States
City	Indian Wells
Period	22/05/17 → 25/05/17

Structured keywords

CDTR

Keywords

Current collapse
GaN HEMT
Leakage
Passivation
Processing

Cite this

Waller, W. M., Gajda, M., Pandey, S., Donkers, J. J. T. M., Calton, D., Croon, J., Karboyan, S., Šonský, J., Uren, M. J., & Kuball, M. (2017). Link between silicon nitride stoichiometry, vertical epitaxial conductivity and current collapse in AlGaN/GaN power devices. In CS MANTECH 2017 - 2017 International Conference on Compound Semiconductor Manufacturing Technology CS Mantech.

Waller, William M. ; Gajda, Mark ; Pandey, Saurabh ; Donkers, Johan J.T.M. ; Calton, David ; Croon, Jeroen ; Karboyan, Serge ; Šonský, Jan ; Uren, Michael J. ; Kuball, Martin. / Link between silicon nitride stoichiometry, vertical epitaxial conductivity and current collapse in AlGaN/GaN power devices. CS MANTECH 2017 - 2017 International Conference on Compound Semiconductor Manufacturing Technology. CS Mantech, 2017.

@inproceedings{2298cd40b0b047f1ad52c06db6bc2c12,

title = "Link between silicon nitride stoichiometry, vertical epitaxial conductivity and current collapse in AlGaN/GaN power devices",

abstract = "Vertical conductivity between the channel and the carbon doped GaN buffer in AlGaN/GaN HEMTs is critical for the suppression of buffer-related current collapse. Here we show for the first time that this leakage path can be controlled by changing the LPCVD SiNx passivation stoichiometry. We demonstrate a direct correlation between SiNx stoichiometry, buffer leakage, and suppression of dynamic RON dispersion.",

keywords = "Current collapse, GaN HEMT, Leakage, Passivation, Processing",

author = "Waller, {William M.} and Mark Gajda and Saurabh Pandey and Donkers, {Johan J.T.M.} and David Calton and Jeroen Croon and Serge Karboyan and Jan {\v S}onsk{\'y} and Uren, {Michael J.} and Martin Kuball",

year = "2017",

month = may,

day = "22",

language = "English",

booktitle = "CS MANTECH 2017 - 2017 International Conference on Compound Semiconductor Manufacturing Technology",

publisher = "CS Mantech",

note = "2017 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2017 ; Conference date: 22-05-2017 Through 25-05-2017",

}

Waller, WM, Gajda, M, Pandey, S, Donkers, JJTM, Calton, D, Croon, J, Karboyan, S, Šonský, J, Uren, MJ & Kuball, M 2017, Link between silicon nitride stoichiometry, vertical epitaxial conductivity and current collapse in AlGaN/GaN power devices. in CS MANTECH 2017 - 2017 International Conference on Compound Semiconductor Manufacturing Technology. CS Mantech, 2017 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2017, Indian Wells, United States, 22/05/17.

Link between silicon nitride stoichiometry, vertical epitaxial conductivity and current collapse in AlGaN/GaN power devices. / Waller, William M.; Gajda, Mark; Pandey, Saurabh; Donkers, Johan J.T.M.; Calton, David; Croon, Jeroen; Karboyan, Serge; Šonský, Jan; Uren, Michael J.; Kuball, Martin.

CS MANTECH 2017 - 2017 International Conference on Compound Semiconductor Manufacturing Technology. CS Mantech, 2017.

Research output: Chapter in Book/Report/Conference proceeding › Conference Contribution (Conference Proceeding)

TY - GEN

T1 - Link between silicon nitride stoichiometry, vertical epitaxial conductivity and current collapse in AlGaN/GaN power devices

AU - Waller, William M.

AU - Gajda, Mark

AU - Pandey, Saurabh

AU - Donkers, Johan J.T.M.

AU - Calton, David

AU - Croon, Jeroen

AU - Karboyan, Serge

AU - Šonský, Jan

AU - Uren, Michael J.

AU - Kuball, Martin

PY - 2017/5/22

Y1 - 2017/5/22

N2 - Vertical conductivity between the channel and the carbon doped GaN buffer in AlGaN/GaN HEMTs is critical for the suppression of buffer-related current collapse. Here we show for the first time that this leakage path can be controlled by changing the LPCVD SiNx passivation stoichiometry. We demonstrate a direct correlation between SiNx stoichiometry, buffer leakage, and suppression of dynamic RON dispersion.

AB - Vertical conductivity between the channel and the carbon doped GaN buffer in AlGaN/GaN HEMTs is critical for the suppression of buffer-related current collapse. Here we show for the first time that this leakage path can be controlled by changing the LPCVD SiNx passivation stoichiometry. We demonstrate a direct correlation between SiNx stoichiometry, buffer leakage, and suppression of dynamic RON dispersion.

KW - Current collapse

KW - GaN HEMT

KW - Leakage

KW - Passivation

KW - Processing

UR - http://www.scopus.com/inward/record.url?scp=85028290268&partnerID=8YFLogxK

M3 - Conference Contribution (Conference Proceeding)

AN - SCOPUS:85028290268

BT - CS MANTECH 2017 - 2017 International Conference on Compound Semiconductor Manufacturing Technology

PB - CS Mantech

T2 - 2017 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2017

Y2 - 22 May 2017 through 25 May 2017

ER -

Link between silicon nitride stoichiometry, vertical epitaxial conductivity and current collapse in AlGaN/GaN power devices

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Keywords

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