Link between silicon nitride stoichiometry, vertical epitaxial conductivity and current collapse in AlGaN/GaN power devices

William M. Waller; Mark Gajda; Saurabh Pandey; Johan J.T.M. Donkers; David Calton; Jeroen Croon; Serge Karboyan; Jan Šonský; Michael J. Uren; Martin Kuball

Link between silicon nitride stoichiometry, vertical epitaxial conductivity and current collapse in AlGaN/GaN power devices

William M. Waller, Mark Gajda, Saurabh Pandey, Johan J.T.M. Donkers, David Calton, Jeroen Croon, Serge Karboyan, Jan Šonský, Michael J. Uren, Martin Kuball

Research output: Chapter in Book/Report/Conference proceeding › Conference Contribution (Conference Proceeding)

2 Citations (Scopus)

Abstract

Vertical conductivity between the channel and the carbon doped GaN buffer in AlGaN/GaN HEMTs is critical for the suppression of buffer-related current collapse. Here we show for the first time that this leakage path can be controlled by changing the LPCVD SiNx passivation stoichiometry. We demonstrate a direct correlation between SiNx stoichiometry, buffer leakage, and suppression of dynamic RON dispersion.

Original language	English
Title of host publication	CS MANTECH 2017 - 2017 International Conference on Compound Semiconductor Manufacturing Technology
Publisher	CS Mantech
Publication status	Published - 22 May 2017
Event	2017 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2017 - Indian Wells, United States Duration: 22 May 2017 → 25 May 2017

Conference

Conference	2017 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2017
Country/Territory	United States
City	Indian Wells
Period	22/05/17 → 25/05/17

Research Groups and Themes

CDTR

Keywords

Current collapse
GaN HEMT
Leakage
Passivation
Processing

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Waller, W. M., Gajda, M., Pandey, S., Donkers, J. J. T. M., Calton, D., Croon, J., Karboyan, S., Šonský, J., Uren, M. J., & Kuball, M. (2017). Link between silicon nitride stoichiometry, vertical epitaxial conductivity and current collapse in AlGaN/GaN power devices. In CS MANTECH 2017 - 2017 International Conference on Compound Semiconductor Manufacturing Technology CS Mantech.

@inproceedings{2298cd40b0b047f1ad52c06db6bc2c12,

title = "Link between silicon nitride stoichiometry, vertical epitaxial conductivity and current collapse in AlGaN/GaN power devices",

abstract = "Vertical conductivity between the channel and the carbon doped GaN buffer in AlGaN/GaN HEMTs is critical for the suppression of buffer-related current collapse. Here we show for the first time that this leakage path can be controlled by changing the LPCVD SiNx passivation stoichiometry. We demonstrate a direct correlation between SiNx stoichiometry, buffer leakage, and suppression of dynamic RON dispersion.",

keywords = "Current collapse, GaN HEMT, Leakage, Passivation, Processing",

author = "Waller, {William M.} and Mark Gajda and Saurabh Pandey and Donkers, {Johan J.T.M.} and David Calton and Jeroen Croon and Serge Karboyan and Jan {\v S}onsk{\'y} and Uren, {Michael J.} and Martin Kuball",

year = "2017",

month = may,

day = "22",

language = "English",

booktitle = "CS MANTECH 2017 - 2017 International Conference on Compound Semiconductor Manufacturing Technology",

publisher = "CS Mantech",

note = "2017 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2017 ; Conference date: 22-05-2017 Through 25-05-2017",

}

Waller, WM, Gajda, M, Pandey, S, Donkers, JJTM, Calton, D, Croon, J, Karboyan, S, Šonský, J, Uren, MJ & Kuball, M 2017, Link between silicon nitride stoichiometry, vertical epitaxial conductivity and current collapse in AlGaN/GaN power devices. in CS MANTECH 2017 - 2017 International Conference on Compound Semiconductor Manufacturing Technology. CS Mantech, 2017 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2017, Indian Wells, United States, 22/05/17.

Link between silicon nitride stoichiometry, vertical epitaxial conductivity and current collapse in AlGaN/GaN power devices. / Waller, William M.; Gajda, Mark; Pandey, Saurabh et al.
CS MANTECH 2017 - 2017 International Conference on Compound Semiconductor Manufacturing Technology. CS Mantech, 2017.

Research output: Chapter in Book/Report/Conference proceeding › Conference Contribution (Conference Proceeding)

TY - GEN

T1 - Link between silicon nitride stoichiometry, vertical epitaxial conductivity and current collapse in AlGaN/GaN power devices

AU - Waller, William M.

AU - Gajda, Mark

AU - Pandey, Saurabh

AU - Donkers, Johan J.T.M.

AU - Calton, David

AU - Croon, Jeroen

AU - Karboyan, Serge

AU - Šonský, Jan

AU - Uren, Michael J.

AU - Kuball, Martin

PY - 2017/5/22

Y1 - 2017/5/22

N2 - Vertical conductivity between the channel and the carbon doped GaN buffer in AlGaN/GaN HEMTs is critical for the suppression of buffer-related current collapse. Here we show for the first time that this leakage path can be controlled by changing the LPCVD SiNx passivation stoichiometry. We demonstrate a direct correlation between SiNx stoichiometry, buffer leakage, and suppression of dynamic RON dispersion.

AB - Vertical conductivity between the channel and the carbon doped GaN buffer in AlGaN/GaN HEMTs is critical for the suppression of buffer-related current collapse. Here we show for the first time that this leakage path can be controlled by changing the LPCVD SiNx passivation stoichiometry. We demonstrate a direct correlation between SiNx stoichiometry, buffer leakage, and suppression of dynamic RON dispersion.

KW - Current collapse

KW - GaN HEMT

KW - Leakage

KW - Passivation

KW - Processing

UR - http://www.scopus.com/inward/record.url?scp=85028290268&partnerID=8YFLogxK

M3 - Conference Contribution (Conference Proceeding)

AN - SCOPUS:85028290268

BT - CS MANTECH 2017 - 2017 International Conference on Compound Semiconductor Manufacturing Technology

PB - CS Mantech

T2 - 2017 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2017

Y2 - 22 May 2017 through 25 May 2017

ER -

Link between silicon nitride stoichiometry, vertical epitaxial conductivity and current collapse in AlGaN/GaN power devices

Abstract

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