Abstract
Vertical conductivity between the channel and the carbon doped GaN buffer in AlGaN/GaN HEMTs is critical for the suppression of buffer-related current collapse. Here we show for the first time that this leakage path can be controlled by changing the LPCVD SiNx passivation stoichiometry. We demonstrate a direct correlation between SiNx stoichiometry, buffer leakage, and suppression of dynamic RON dispersion.
Original language | English |
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Title of host publication | CS MANTECH 2017 - 2017 International Conference on Compound Semiconductor Manufacturing Technology |
Publisher | CS Mantech |
Publication status | Published - 22 May 2017 |
Event | 2017 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2017 - Indian Wells, United States Duration: 22 May 2017 → 25 May 2017 |
Conference
Conference | 2017 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2017 |
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Country/Territory | United States |
City | Indian Wells |
Period | 22/05/17 → 25/05/17 |
Research Groups and Themes
- CDTR
Keywords
- Current collapse
- GaN HEMT
- Leakage
- Passivation
- Processing