Localisation effects caused by the remote donors in modulation-doped quantum wells

JM Rorison, M.J. Kane, D.C. Herbert, M.S. Skolnick, L.L. Taylor, S.J. Bass

Research output: Contribution to journalArticle (Academic Journal)peer-review

8 Citations (Scopus)

Abstract

In modulation-doped quantum wells (QWS) electrons are introduced into the QW by doping only the barrier region with an undoped spacer layer nearest the quantum well. The electrons flow into the QW forming a two-dimensional (2D) gas which is separated from the ionised donors by the spacer layer. The authors have developed a theoretical model to determine the size and scale of potential fluctuations 2η created in the 2D electron gas in the QW by the random distribution of ionised donors modelled as a 2D sheet. The interaction is through a 2D statistically screened coulomb interaction. The size of the fluctuations grow as √Ns where Ns is the two-dimensional density of ionised donors which compares with a 2D level Fermi energy EFE which grows as n2D, where n2D is the two-dimensional density of electronics. They show that for EFE
Translated title of the contributionLocalisation effects caused by the remote donors in modulation-doped quantum wells
Original languageEnglish
Pages (from-to)12 - 17
Number of pages6
JournalSemiconductor Science and Technology
Volume3 (1)
DOIs
Publication statusPublished - Jan 1988

Bibliographical note

Publisher: IoP

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