Abstract
In modulation-doped quantum wells (QWS) electrons are introduced into the QW by doping only the barrier region with an undoped spacer layer nearest the quantum well. The electrons flow into the QW forming a two-dimensional (2D) gas which is separated from the ionised donors by the spacer layer. The authors have developed a theoretical model to determine the size and scale of potential fluctuations 2η created in the 2D electron gas in the QW by the random distribution of ionised donors modelled as a 2D sheet. The interaction is through a 2D statistically screened coulomb interaction. The size of the fluctuations grow as √Ns where Ns is the two-dimensional density of ionised donors which compares with a 2D level Fermi energy EFE which grows as n2D, where n2D is the two-dimensional density of electronics. They show that for EFE
Translated title of the contribution | Localisation effects caused by the remote donors in modulation-doped quantum wells |
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Original language | English |
Pages (from-to) | 12 - 17 |
Number of pages | 6 |
Journal | Semiconductor Science and Technology |
Volume | 3 (1) |
DOIs | |
Publication status | Published - Jan 1988 |
Bibliographical note
Publisher: IoPResearch Groups and Themes
- Photonics and Quantum