Localization of off-stress-induced damage in AlGaN/GaN high electron mobility transistors by means of low frequency 1/f noise measurements

Marco Silvestri; Michael J. Uren; Nicole Killat; Denis Marcon; Martin Kuball

doi:10.1063/1.4816424

Localization of off-stress-induced damage in AlGaN/GaN high electron mobility transistors by means of low frequency 1/f noise measurements

Marco Silvestri, Michael J. Uren, Nicole Killat, Denis Marcon, Martin Kuball

School of Physics

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Abstract

The location of the time dependent degradation in OFF-state stressed AlGaN/GaN high electron mobility transistors is studied using low frequency 1/f noise measurements, with additional electroluminescence analysis. The gate bias dependence of the 1/f noise is shown to be a powerful tool to illustrate that in addition to the gate edge breakdown, progressive time-dependent trap generation occurs underneath the gate area, possibly extending in the gate-drain access region due to the electric field peak associated with the gate field plate.

Original language	English
Article number	043506
Number of pages	4
Journal	Applied Physics Letters
Volume	103
Issue number	4
DOIs	https://doi.org/10.1063/1.4816424
Publication status	Published - 23 Jul 2013

Structured keywords

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Keywords

1/f noise
aluminium compounds
electroluminescence
gallium compounds
high electron mobility transistors
III-V semiconductors
semiconductor device breakdown gap
semiconductors
semiconductor device noise wide band

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10.1063/1.4816424

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Copyright (2013) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared inAppl. Phys. Lett. 103, 043506 (2013) and may be found at http://dx.doi.org/10.1063/1.4816424
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PEARGaN
Kuball, M. H. H.
1/10/12 → 1/10/14
Project: Research
Novel Sub-Threshold Methodologies for GaN Electronic Devices: A Study of Device Reliability and Failure Mechanisms
Kuball, M. H. H.
1/04/11 → 1/11/15
Project: Research

Cite this

@article{8da61a3458094ac79d9cd1a127381010,

title = "Localization of off-stress-induced damage in AlGaN/GaN high electron mobility transistors by means of low frequency 1/f noise measurements",

abstract = "The location of the time dependent degradation in OFF-state stressed AlGaN/GaN high electron mobility transistors is studied using low frequency 1/f noise measurements, with additional electroluminescence analysis. The gate bias dependence of the 1/f noise is shown to be a powerful tool to illustrate that in addition to the gate edge breakdown, progressive time-dependent trap generation occurs underneath the gate area, possibly extending in the gate-drain access region due to the electric field peak associated with the gate field plate.",

keywords = "1/f noise , aluminium compounds , electroluminescence, gallium compounds , high electron mobility transistors, III-V semiconductors , semiconductor device breakdown gap , semiconductors, semiconductor device noise wide band ",

author = "Marco Silvestri and Uren, {Michael J.} and Nicole Killat and Denis Marcon and Martin Kuball",

year = "2013",

month = jul,

day = "23",

doi = "10.1063/1.4816424",

language = "English",

volume = "103",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics (AIP)",

number = "4",

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TY - JOUR

T1 - Localization of off-stress-induced damage in AlGaN/GaN high electron mobility transistors by means of low frequency 1/f noise measurements

AU - Silvestri, Marco

AU - Uren, Michael J.

AU - Killat, Nicole

AU - Marcon, Denis

AU - Kuball, Martin

PY - 2013/7/23

Y1 - 2013/7/23

N2 - The location of the time dependent degradation in OFF-state stressed AlGaN/GaN high electron mobility transistors is studied using low frequency 1/f noise measurements, with additional electroluminescence analysis. The gate bias dependence of the 1/f noise is shown to be a powerful tool to illustrate that in addition to the gate edge breakdown, progressive time-dependent trap generation occurs underneath the gate area, possibly extending in the gate-drain access region due to the electric field peak associated with the gate field plate.

AB - The location of the time dependent degradation in OFF-state stressed AlGaN/GaN high electron mobility transistors is studied using low frequency 1/f noise measurements, with additional electroluminescence analysis. The gate bias dependence of the 1/f noise is shown to be a powerful tool to illustrate that in addition to the gate edge breakdown, progressive time-dependent trap generation occurs underneath the gate area, possibly extending in the gate-drain access region due to the electric field peak associated with the gate field plate.

KW - 1/f noise

KW - aluminium compounds

KW - electroluminescence

KW - gallium compounds

KW - high electron mobility transistors

KW - III-V semiconductors

KW - semiconductor device breakdown gap

KW - semiconductors

KW - semiconductor device noise wide band

U2 - 10.1063/1.4816424

DO - 10.1063/1.4816424

M3 - Article (Academic Journal)

VL - 103

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 4

M1 - 043506

ER -

Localization of off-stress-induced damage in AlGaN/GaN high electron mobility transistors by means of low frequency 1/f noise measurements

Abstract

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Keywords

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PEARGaN

Novel Sub-Threshold Methodologies for GaN Electronic Devices: A Study of Device Reliability and Failure Mechanisms

Cite this