Localization of off-stress-induced damage in AlGaN/GaN high electron mobility transistors by means of low frequency 1/f noise measurements

Marco Silvestri, Michael J. Uren, Nicole Killat, Denis Marcon, Martin Kuball

Research output: Contribution to journalArticle (Academic Journal)peer-review

27 Citations (Scopus)
388 Downloads (Pure)

Abstract

The location of the time dependent degradation in OFF-state stressed AlGaN/GaN high electron mobility transistors is studied using low frequency 1/f noise measurements, with additional electroluminescence analysis. The gate bias dependence of the 1/f noise is shown to be a powerful tool to illustrate that in addition to the gate edge breakdown, progressive time-dependent trap generation occurs underneath the gate area, possibly extending in the gate-drain access region due to the electric field peak associated with the gate field plate.
Original languageEnglish
Article number043506
Number of pages4
JournalApplied Physics Letters
Volume103
Issue number4
DOIs
Publication statusPublished - 23 Jul 2013

Structured keywords

  • CDTR

Keywords

  • 1/f noise
  • aluminium compounds
  • electroluminescence
  • gallium compounds
  • high electron mobility transistors
  • III-V semiconductors
  • semiconductor device breakdown gap
  • semiconductors
  • semiconductor device noise wide band

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