Projects per year
The location of the time dependent degradation in OFF-state stressed AlGaN/GaN high electron mobility transistors is studied using low frequency 1/f noise measurements, with additional electroluminescence analysis. The gate bias dependence of the 1/f noise is shown to be a powerful tool to illustrate that in addition to the gate edge breakdown, progressive time-dependent trap generation occurs underneath the gate area, possibly extending in the gate-drain access region due to the electric field peak associated with the gate field plate.
- 1/f noise
- aluminium compounds
- gallium compounds
- high electron mobility transistors
- III-V semiconductors
- semiconductor device breakdown gap
- semiconductor device noise wide band
FingerprintDive into the research topics of 'Localization of off-stress-induced damage in AlGaN/GaN high electron mobility transistors by means of low frequency 1/f noise measurements'. Together they form a unique fingerprint.
- 2 Finished
Novel Sub-Threshold Methodologies for GaN Electronic Devices: A Study of Device Reliability and Failure Mechanisms
1/04/11 → 1/11/15