Long distance point defect migration in irradiated SiC observed by deep level transient spectroscopy

G Alfieri, U Grossner, EV Monakhov, BG Svensson, JW Steeds, W Sullivan

Research output: Contribution to journalArticle (Academic Journal)

2 Citations (Scopus)
Translated title of the contributionLong distance point defect migration in irradiated SiC observed by deep level transient spectroscopy
Original languageEnglish
Pages (from-to)485 - 488
Number of pages4
JournalMaterials Science Forum - Silicon Carbide and Related Materials 2005
Volume527-529
Publication statusPublished - 2006

Bibliographical note

Publisher: Trans. Tech. Publications Limited
Other identifier: ID 137.222.30-94

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