Long distance point defect migration in irradiated SiC observed by deep level transient spectroscopy

G Alfieri, U Grossner, EV Monakhov, BG Svensson, JW Steeds, W Sullivan

Research output: Contribution to journal › Article (Academic Journal) › peer-review

2 Citations (Scopus)

Translated title of the contribution	Long distance point defect migration in irradiated SiC observed by deep level transient spectroscopy
Original language	English
Pages (from-to)	485 - 488
Number of pages	4
Journal	Materials Science Forum - Silicon Carbide and Related Materials 2005
Volume	527-529
Publication status	Published - 2006

Publisher: Trans. Tech. Publications Limited
Other identifier: ID 137.222.30-94

Handle.net

@article{ed57ff4aedd84d7a981c097a67386f30,

title = "Long distance point defect migration in irradiated SiC observed by deep level transient spectroscopy",

author = "G Alfieri and U Grossner and EV Monakhov and BG Svensson and JW Steeds and W Sullivan",

note = "Publisher: Trans. Tech. Publications Limited Other identifier: ID 137.222.30-94",

year = "2006",

language = "English",

volume = "527-529",

pages = "485 -- 488",

journal = "Materials Science Forum - Silicon Carbide and Related Materials 2005",

issn = "0255-5476",

publisher = "Trans Tech Publications Inc",

}

TY - JOUR

T1 - Long distance point defect migration in irradiated SiC observed by deep level transient spectroscopy

AU - Alfieri, G

AU - Grossner, U

AU - Monakhov, EV

AU - Svensson, BG

AU - Steeds, JW

AU - Sullivan, W

N1 - Publisher: Trans. Tech. Publications Limited Other identifier: ID 137.222.30-94

PY - 2006

Y1 - 2006

M3 - Article (Academic Journal)

VL - 527-529

SP - 485

EP - 488

JO - Materials Science Forum - Silicon Carbide and Related Materials 2005

JF - Materials Science Forum - Silicon Carbide and Related Materials 2005

SN - 0255-5476

ER -