Low Field Vertical Charge Transport in the Channel and Buffer Layers of GaN-on-Si High Electron Mobility Transistors

Filip Wach, Michael J. Uren, Benoit Bakeroot, Ming Zhao, Stefaan Decoutere, Martin Kuball

Research output: Contribution to journal › Article (Academic Journal) › peer-review

21 Citations (Scopus)

Original language	Undefined/Unknown
Journal	IEEE Electron Device Letters
DOIs	https://doi.org/10.1109/LED.2020.3030341
Publication status	Published - Dec 2020

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@article{19c90a08b8614a3f9ee628ea1f3b7438,

title = "Low Field Vertical Charge Transport in the Channel and Buffer Layers of GaN-on-Si High Electron Mobility Transistors",

author = "Filip Wach and Uren, {Michael J.} and Benoit Bakeroot and Ming Zhao and Stefaan Decoutere and Martin Kuball",

year = "2020",

month = dec,

doi = "10.1109/LED.2020.3030341",

language = "Undefined/Unknown",

journal = "IEEE Electron Device Letters",

issn = "0741-3106",

publisher = "Institute of Electrical and Electronics Engineers (IEEE)",

}

TY - JOUR

T1 - Low Field Vertical Charge Transport in the Channel and Buffer Layers of GaN-on-Si High Electron Mobility Transistors

AU - Wach, Filip

AU - Uren, Michael J.

AU - Bakeroot, Benoit

AU - Zhao, Ming

AU - Decoutere, Stefaan

AU - Kuball, Martin

PY - 2020/12

Y1 - 2020/12

UR - https://doi.org/10.1109/LED.2020.3030341

U2 - 10.1109/LED.2020.3030341

DO - 10.1109/LED.2020.3030341

M3 - Article (Academic Journal)

SN - 0741-3106

JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

ER -