Low Temperature Loss-Analysis of SiC MOSFETs for Integrated Motor Drive Applications

Angus Cameron; Andrew Hopkins; Nick Simpson; Phil Mellor

doi:10.1109/ecce53617.2023.10362750

Low Temperature Loss-Analysis of SiC MOSFETs for Integrated Motor Drive Applications

Angus Cameron, Andrew Hopkins, Nick Simpson, Phil Mellor

Research output: Chapter in Book/Report/Conference proceeding › Conference Contribution (Conference Proceeding)

1 Citation (Scopus)

Abstract

The development of electrical machine drives requires the assessment of semiconductor device performance over the entire anticipated operating temperature range, which includes cold start and arctic conditions alongside elevated temperature conditions. In this paper, the development and commissioning of an experimental testbench for characterising MOSFETs at cold temperatures down to -45 °C is presented. The experimental hardware allows for rapid acquistion of data that is not readily available from manufacturer datasheets at present. Results are presented for nine different 3rd generation SiC MOSFETs with voltage ratings between 650 V and 1.7 kV.

Original language	English
Title of host publication	2023 IEEE Energy Conversion Congress and Exposition (ECCE)
Publisher	Institute of Electrical and Electronics Engineers (IEEE)
ISBN (Electronic)	9798350316445
ISBN (Print)	9798350316452
DOIs	https://doi.org/10.1109/ecce53617.2023.10362750
Publication status	Published - 29 Dec 2023

Publication series

Name	IEEE Energy Conversion Congress and Exposition
Publisher	IEEE
ISSN (Print)	2329-3721
ISSN (Electronic)	2329-3748

Access to Document

10.1109/ecce53617.2023.10362750Licence: Unspecified

Handle.net

Persistent link

Cite this

@inproceedings{c8c92b030dde4851a1d6e09dd741f761,

title = "Low Temperature Loss-Analysis of SiC MOSFETs for Integrated Motor Drive Applications",

abstract = "The development of electrical machine drives requires the assessment of semiconductor device performance over the entire anticipated operating temperature range, which includes cold start and arctic conditions alongside elevated temperature conditions. In this paper, the development and commissioning of an experimental testbench for characterising MOSFETs at cold temperatures down to -45 °C is presented. The experimental hardware allows for rapid acquistion of data that is not readily available from manufacturer datasheets at present. Results are presented for nine different 3rd generation SiC MOSFETs with voltage ratings between 650 V and 1.7 kV.",

author = "Angus Cameron and Andrew Hopkins and Nick Simpson and Phil Mellor",

year = "2023",

month = dec,

day = "29",

doi = "10.1109/ecce53617.2023.10362750",

language = "English",

isbn = "9798350316452",

series = "IEEE Energy Conversion Congress and Exposition",

publisher = "Institute of Electrical and Electronics Engineers (IEEE)",

booktitle = "2023 IEEE Energy Conversion Congress and Exposition (ECCE)",

address = "United States",

}

Low Temperature Loss-Analysis of SiC MOSFETs for Integrated Motor Drive Applications. / Cameron, Angus ; Hopkins, Andrew ; Simpson, Nick et al.
2023 IEEE Energy Conversion Congress and Exposition (ECCE). Institute of Electrical and Electronics Engineers (IEEE), 2023. (IEEE Energy Conversion Congress and Exposition).

Research output: Chapter in Book/Report/Conference proceeding › Conference Contribution (Conference Proceeding)

TY - GEN

T1 - Low Temperature Loss-Analysis of SiC MOSFETs for Integrated Motor Drive Applications

AU - Cameron, Angus

AU - Hopkins, Andrew

AU - Simpson, Nick

AU - Mellor, Phil

PY - 2023/12/29

Y1 - 2023/12/29

N2 - The development of electrical machine drives requires the assessment of semiconductor device performance over the entire anticipated operating temperature range, which includes cold start and arctic conditions alongside elevated temperature conditions. In this paper, the development and commissioning of an experimental testbench for characterising MOSFETs at cold temperatures down to -45 °C is presented. The experimental hardware allows for rapid acquistion of data that is not readily available from manufacturer datasheets at present. Results are presented for nine different 3rd generation SiC MOSFETs with voltage ratings between 650 V and 1.7 kV.

AB - The development of electrical machine drives requires the assessment of semiconductor device performance over the entire anticipated operating temperature range, which includes cold start and arctic conditions alongside elevated temperature conditions. In this paper, the development and commissioning of an experimental testbench for characterising MOSFETs at cold temperatures down to -45 °C is presented. The experimental hardware allows for rapid acquistion of data that is not readily available from manufacturer datasheets at present. Results are presented for nine different 3rd generation SiC MOSFETs with voltage ratings between 650 V and 1.7 kV.

UR - http://dx.doi.org/10.1109/ecce53617.2023.10362750

U2 - 10.1109/ecce53617.2023.10362750

DO - 10.1109/ecce53617.2023.10362750

M3 - Conference Contribution (Conference Proceeding)

SN - 9798350316452

T3 - IEEE Energy Conversion Congress and Exposition

BT - 2023 IEEE Energy Conversion Congress and Exposition (ECCE)

PB - Institute of Electrical and Electronics Engineers (IEEE)

ER -

Low Temperature Loss-Analysis of SiC MOSFETs for Integrated Motor Drive Applications

Abstract

Publication series

Access to Document

Handle.net

Other files and links

Fingerprint

Cite this