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Low temperature synthesis of graphene nanocomposites using surface passivation of porous silicon nanocrystallites with carbon atoms

  • Kurbangali B. Tynyshtykbayev
  • , Ardak Ainabаyev
  • , Oleg Kononenko
  • , Maxim Chichkov
  • , Zamart Ramazanova
  • , Ramiz Zulkharnai
  • , Dmitry Roshchupkin
  • , Julia Sorokupudova
  • , Vitaly Starkov
  • , Zinetula Insepov*
  • *Corresponding author for this work

Research output: Contribution to journal › Article (Academic Journal) › peer-review

9 Citations (Scopus)

Abstract

This work presents the experimental investigation of the synthesis of graphene carbon nanocomposites (CNC-G) by carbonization of porous silicon (PS) using CVD method at low temperature of T = 350–500 °C. The low-temperature synthesis of CNC-G is explained by a low melting temperature of porous silicon nanocrystallites (nc-PS) formed during electrochemical etching.

Original languageEnglish
Pages (from-to)53-60
Number of pages8
JournalDiamond and Related Materials
Volume92
DOIs
Publication statusPublished - Feb 2019

Bibliographical note

Funding Information:
This work was supported in part by the Nazarbayev University World Science Stars program , under Grant No. 031-2013 of 12/3/2013 and by State tasks № 007-00029-16 IMT RAS . The authors would like to thank Professor Ahmed Hassanein for proofreading the manuscript.

Publisher Copyright:
© 2018 Elsevier B.V.

Copyright:
Copyright 2019 Elsevier B.V., All rights reserved.

Keywords

  • Carbonization
  • CVD method
  • Graphenic carbon materials
  • Low-temperature
  • Nanocrystallites
  • Porous silicon
  • Spatially oriented graphene
  • Surface energy
  • Synthesis

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