Low Thermal Boundary Resistance Interfaces for GaN-on-Diamond Devices

Luke Yates, Jonathan Anderson, Xing Gu, Cathy Lee, Tingyu Bai, Matthew Mecklenburg, Toshihiro Aoki, Mark S. Goorsky, Martin Kuball, Edwin L. Piner, Samuel Graham*

*Corresponding author for this work

Research output: Contribution to journalArticle (Academic Journal)

20 Citations (Scopus)

Abstract

The development of GaN-on-diamond devices holds much promise for the creation of high-power density electronics. Inherent to the growth of these devices, a dielectric layer is placed between the GaN and diamond, which can contribute significantly to the overall thermal resistance of the structure. In this work, we explore the role of different interfaces in contributing to the thermal resistance of the interface of GaN/diamond layers, specifically using 5 nm layers of AlN, SiN, or no interlayer at all. Using time-domain thermoreflectance along with electron energy loss spectroscopy, we were able to determine that a SiN interfacial layer provided the lowest thermal boundary resistance (<10 m2K/GW) because of the formation of an Si-C-N layer at the interface. The AlN and no interlayer samples were observed to have TBRs greater than 20 m2K/GW as a result of a harsh growth environment that roughened the interface (enhancing phonon scattering) when the GaN was not properly protected.

Original languageEnglish
Pages (from-to)24302-24309
Number of pages8
JournalACS Applied Materials and Interfaces
Volume10
Issue number28
Early online date25 Jun 2018
DOIs
Publication statusPublished - 18 Jul 2018

Structured keywords

  • CDTR

Keywords

  • GaN-on-diamond devices
  • interfacial composition
  • thermal boundary resistance
  • time-domain thermoreflectance

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