Lumped device modeling with FDTD including packaging effects

BP Koh, IJ Craddock, PR Rogers, CJ Railton

Research output: Chapter in Book/Report/Conference proceedingConference Contribution (Conference Proceeding)

1 Citation (Scopus)
446 Downloads (Pure)


A two-terminal device can be incorporated into FDTD using the Lumped Element FDTD (LE-FDTD) formulation, unfortunately, this method is not able to analyze accurately the packaging effects of the device. This is possible using Lumped Network FDTD (LN-FDTD) - however LN-FDTD requires a complicated pre-calculation for simple devices such as Schottky or varactor diode. Therefore, this paper presents a simple and effective state space approach to incorporate device packaging effects into FDTD algorithm. The new technique is validated by means of experimental measurements of a varactor-tuned patch antenna and the agreement between the predicted and actual responses is shown to be excellent
Translated title of the contributionLumped device modeling with FDTD including packaging effects
Original languageEnglish
Title of host publicationIEEE MTT-S International : Microwave Symposium, 2002
PublisherInstitute of Electrical and Electronics Engineers (IEEE)
Pages1139 - 1142
Number of pages4
ISBN (Print)0780372395
Publication statusPublished - Jun 2002
EventIEEE MTT-S International Microwave Symposium - Seattle, United States
Duration: 1 Jun 2002 → …


ConferenceIEEE MTT-S International Microwave Symposium
CountryUnited States
Period1/06/02 → …

Bibliographical note

Name and Venue of Event: Seattle, USA
Conference Proceedings/Title of Journal: IEEE MTT-S International : Microwave Symposium, 2002
Rose publication type: Conference contribution

Sponsorship: The authors wish to thank Professors Bull and
McGeehan for provision of facilities at Bristol and EPSRC for sponsoring this work

Terms of use: Copyright © 2002 IEEE. Reprinted from IEEE MTT-S International Microwave Symposium, 2002.

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