Manipulation of the homogeneous linewidth of an individual In(Ga)As quantum dot

R  Oulton; J J  Finley; A D  Ashmore; I S  Gregory; D J  Mowbray; M S  Skolnick; M J  Steer; S L  Liew; M A  Migliorato; A J  Cullis

doi:10.1103/PhysRevB.66.045313

Manipulation of the homogeneous linewidth of an individual In(Ga)As quantum dot

R Oulton, J J Finley, A D Ashmore, I S Gregory, D J Mowbray, M S Skolnick, M J Steer, S L Liew, M A Migliorato, A J Cullis

Research output: Contribution to journal › Article (Academic Journal) › peer-review

Abstract

By application of external electric field, we demonstrate the ability to controllably manipulate the homogenous linewidth of exciton transitions in a single self-assembled In(Ga)As quantum dot (QD). Complementary emission (photoluminescence) and absorption (photocurrent) measurements are used to probe directly the competing processes of radiative recombination and carrier tunnelling escape from the dot. At high electric fields (greater than or similar to100 kV/cm) the exciton line shape is lifetime (homogenously) broadened with mesoscopic broadening effects arising from coupling of the QD to its electrostatic environment determining the low field line shape.

Original language	English
Article number	045313
Pages (from-to)	-
Number of pages	4
Journal	Physical Review B: Condensed Matter and Materials Physics
Volume	66
Issue number	4
DOIs	https://doi.org/10.1103/PhysRevB.66.045313
Publication status	Published - 15 Jul 2002

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title = "Manipulation of the homogeneous linewidth of an individual In(Ga)As quantum dot",

abstract = "By application of external electric field, we demonstrate the ability to controllably manipulate the homogenous linewidth of exciton transitions in a single self-assembled In(Ga)As quantum dot (QD). Complementary emission (photoluminescence) and absorption (photocurrent) measurements are used to probe directly the competing processes of radiative recombination and carrier tunnelling escape from the dot. At high electric fields (greater than or similar to100 kV/cm) the exciton line shape is lifetime (homogenously) broadened with mesoscopic broadening effects arising from coupling of the QD to its electrostatic environment determining the low field line shape.",

author = "R Oulton and Finley, {J J} and Ashmore, {A D} and Gregory, {I S} and Mowbray, {D J} and Skolnick, {M S} and Steer, {M J} and Liew, {S L} and Migliorato, {M A} and Cullis, {A J}",

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doi = "10.1103/PhysRevB.66.045313",

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TY - JOUR

T1 - Manipulation of the homogeneous linewidth of an individual In(Ga)As quantum dot

AU - Oulton, R

AU - Finley, J J

AU - Ashmore, A D

AU - Gregory, I S

AU - Mowbray, D J

AU - Skolnick, M S

AU - Steer, M J

AU - Liew, S L

AU - Migliorato, M A

AU - Cullis, A J

PY - 2002/7/15

Y1 - 2002/7/15

N2 - By application of external electric field, we demonstrate the ability to controllably manipulate the homogenous linewidth of exciton transitions in a single self-assembled In(Ga)As quantum dot (QD). Complementary emission (photoluminescence) and absorption (photocurrent) measurements are used to probe directly the competing processes of radiative recombination and carrier tunnelling escape from the dot. At high electric fields (greater than or similar to100 kV/cm) the exciton line shape is lifetime (homogenously) broadened with mesoscopic broadening effects arising from coupling of the QD to its electrostatic environment determining the low field line shape.

AB - By application of external electric field, we demonstrate the ability to controllably manipulate the homogenous linewidth of exciton transitions in a single self-assembled In(Ga)As quantum dot (QD). Complementary emission (photoluminescence) and absorption (photocurrent) measurements are used to probe directly the competing processes of radiative recombination and carrier tunnelling escape from the dot. At high electric fields (greater than or similar to100 kV/cm) the exciton line shape is lifetime (homogenously) broadened with mesoscopic broadening effects arising from coupling of the QD to its electrostatic environment determining the low field line shape.

U2 - 10.1103/PhysRevB.66.045313

DO - 10.1103/PhysRevB.66.045313

M3 - Article (Academic Journal)

SN - 1098-0121

VL - 66

SP - -

JO - Physical Review B: Condensed Matter and Materials Physics

JF - Physical Review B: Condensed Matter and Materials Physics

IS - 4

M1 - 045313

ER -

Manipulation of the homogeneous linewidth of an individual In(Ga)As quantum dot

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