Many-body effects in optical spectra of n-doped alloy semiconductor quantum-well structures

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24 Citations (Scopus)

Abstract

Recently observed luminescence spectra in the alloy semiconductor quantum-well system InGaAs/InP show an enhancement of the electron-hole (e-h) recombination oscillator strength at the electron Fermi energy (EFe). This enhancement is explained, using a generalized e-h pair propagator and static screening, as due to multiple e-h scattering and recombination of the electrons at EFe with the small number of optically excited holes which have wave-vector components of the order of kFe (the electron Fermi wave-vector) due to localisation effects. The localisation is taken to rise from alloy disorder
Translated title of the contributionMany-body effects in optical spectra of n-doped alloy semiconductor quantum-well structures
Original languageEnglish
Pages (from-to)L311 - L3119
Number of pages9
JournalJournal of Physics C (Solid State Physics)
Volume20 (15)
DOIs
Publication statusPublished - May 1987

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