Many-electron edge singularity at the fermi cutoff in the photoluminescence spectrum of modulation-doped quantum wells

KJ Nash, MS Skolnick, JM Rorison, SJ Bass, AD Pitt

Research output: Contribution to journalArticle (Academic Journal)peer-review

Abstract

We have studied the low-temperature photoluminescence (PL) of n-type modulation doped In0.53Ga0.47As/InP quantum wells. The photocreated holes are localized and can recombine with any of the electrons. The PL lineshape is strongly skewed to higher energies, on account of the many-body Fermi energy edge singularity. This interpretation is supported by calculations of the lineshape that include the screened electron-hole interaction, and by the temperature-dependence of the spectrum.
Translated title of the contributionMany-electron edge singularity at the fermi cutoff in the photoluminescence spectrum of modulation-doped quantum wells
Original languageEnglish
Pages (from-to)553 - 554
Number of pages2
JournalSuperlattices and Microstructures
Volume4 (4-5)
DOIs
Publication statusPublished - Jul 1988

Bibliographical note

Publisher: ACADEMIC PRESS LTD

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