Many-electron edge singularity at the fermi cutoff in the photoluminescence spectrum of modulation-doped quantum wells

KJ Nash; MS Skolnick; JM Rorison; SJ Bass; AD Pitt

doi:10.1016/0749-6036(88)90236-4

Many-electron edge singularity at the fermi cutoff in the photoluminescence spectrum of modulation-doped quantum wells

KJ Nash, MS Skolnick, JM Rorison, SJ Bass, AD Pitt

Research output: Contribution to journal › Article (Academic Journal) › peer-review

Abstract

We have studied the low-temperature photoluminescence (PL) of n-type modulation doped In0.53Ga0.47As/InP quantum wells. The photocreated holes are localized and can recombine with any of the electrons. The PL lineshape is strongly skewed to higher energies, on account of the many-body Fermi energy edge singularity. This interpretation is supported by calculations of the lineshape that include the screened electron-hole interaction, and by the temperature-dependence of the spectrum.

Translated title of the contribution	Many-electron edge singularity at the fermi cutoff in the photoluminescence spectrum of modulation-doped quantum wells
Original language	English
Pages (from-to)	553 - 554
Number of pages	2
Journal	Superlattices and Microstructures
Volume	4 (4-5)
DOIs	https://doi.org/10.1016/0749-6036(88)90236-4
Publication status	Published - Jul 1988

Bibliographical note

Publisher: ACADEMIC PRESS LTD

Research Groups and Themes

Photonics and Quantum

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title = "Many-electron edge singularity at the fermi cutoff in the photoluminescence spectrum of modulation-doped quantum wells",

abstract = "We have studied the low-temperature photoluminescence (PL) of n-type modulation doped In0.53Ga0.47As/InP quantum wells. The photocreated holes are localized and can recombine with any of the electrons. The PL lineshape is strongly skewed to higher energies, on account of the many-body Fermi energy edge singularity. This interpretation is supported by calculations of the lineshape that include the screened electron-hole interaction, and by the temperature-dependence of the spectrum.",

author = "KJ Nash and MS Skolnick and JM Rorison and SJ Bass and AD Pitt",

note = "Publisher: ACADEMIC PRESS LTD",

year = "1988",

month = jul,

doi = "10.1016/0749-6036(88)90236-4",

language = "English",

volume = "4 (4-5)",

pages = "553 -- 554",

journal = "Superlattices and Microstructures",

issn = "2773-0123",

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TY - JOUR

T1 - Many-electron edge singularity at the fermi cutoff in the photoluminescence spectrum of modulation-doped quantum wells

AU - Nash, KJ

AU - Skolnick, MS

AU - Rorison, JM

AU - Bass, SJ

AU - Pitt, AD

N1 - Publisher: ACADEMIC PRESS LTD

PY - 1988/7

Y1 - 1988/7

N2 - We have studied the low-temperature photoluminescence (PL) of n-type modulation doped In0.53Ga0.47As/InP quantum wells. The photocreated holes are localized and can recombine with any of the electrons. The PL lineshape is strongly skewed to higher energies, on account of the many-body Fermi energy edge singularity. This interpretation is supported by calculations of the lineshape that include the screened electron-hole interaction, and by the temperature-dependence of the spectrum.

AB - We have studied the low-temperature photoluminescence (PL) of n-type modulation doped In0.53Ga0.47As/InP quantum wells. The photocreated holes are localized and can recombine with any of the electrons. The PL lineshape is strongly skewed to higher energies, on account of the many-body Fermi energy edge singularity. This interpretation is supported by calculations of the lineshape that include the screened electron-hole interaction, and by the temperature-dependence of the spectrum.

U2 - 10.1016/0749-6036(88)90236-4

DO - 10.1016/0749-6036(88)90236-4

M3 - Article (Academic Journal)

SN - 2773-0123

SN - 1096-3677

VL - 4 (4-5)

SP - 553

EP - 554

JO - Superlattices and Microstructures

JF - Superlattices and Microstructures

ER -

Many-electron edge singularity at the fermi cutoff in the photoluminescence spectrum of modulation-doped quantum wells

Abstract

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