The material gain and transparency carrier density of semiconducting indium compounds and aluminum compounds were compared at room temperature. The analysis was made to determine the modulation response and threshold carrier density for laser diode applications. Aluminum gallium indium arsenide was found to have the highest peak differential gain and lowest carrier density.
|Translated title of the contribution||Material gain comparison for InGaAsP, AlGaInAs and InGaAsN for 1.3 micron laser diode|
|Title of host publication||Conference on Lasers and Electro-Optics Europe (CLEO 2001), Baltimore, USA|
|Publisher||Institute of Electrical and Electronics Engineers (IEEE)|
|Pages||479 - 480|
|Number of pages||2|
|Publication status||Published - 6 May 2001|