Material gain comparison for InGaAsP, AlGaInAs and InGaAsN for 1.3 micron laser diode

JCL Yong, JM Rorison, IH White

Research output: Chapter in Book/Report/Conference proceedingConference Contribution (Conference Proceeding)

5 Citations (Scopus)

Abstract

The material gain and transparency carrier density of semiconducting indium compounds and aluminum compounds were compared at room temperature. The analysis was made to determine the modulation response and threshold carrier density for laser diode applications. Aluminum gallium indium arsenide was found to have the highest peak differential gain and lowest carrier density.
Translated title of the contributionMaterial gain comparison for InGaAsP, AlGaInAs and InGaAsN for 1.3 micron laser diode
Original languageEnglish
Title of host publicationConference on Lasers and Electro-Optics Europe (CLEO 2001), Baltimore, USA
PublisherInstitute of Electrical and Electronics Engineers (IEEE)
Pages479 - 480
Number of pages2
ISBN (Print)1557526621
DOIs
Publication statusPublished - 6 May 2001

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