Material gain comparison for InGaAsP, AlGaInAs and InGaAsN for 1.3 micron laser diode

JCL Yong; JM Rorison; IH White

doi:10.1109/CLEO.2001.948067

Material gain comparison for InGaAsP, AlGaInAs and InGaAsN for 1.3 micron laser diode

JCL Yong, JM Rorison, IH White

Department of Electrical & Electronic Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference Contribution (Conference Proceeding)

7 Citations (Scopus)

Abstract

The material gain and transparency carrier density of semiconducting indium compounds and aluminum compounds were compared at room temperature. The analysis was made to determine the modulation response and threshold carrier density for laser diode applications. Aluminum gallium indium arsenide was found to have the highest peak differential gain and lowest carrier density.

Translated title of the contribution	Material gain comparison for InGaAsP, AlGaInAs and InGaAsN for 1.3 micron laser diode
Original language	English
Title of host publication	Conference on Lasers and Electro-Optics Europe (CLEO 2001), Baltimore, USA
Publisher	Institute of Electrical and Electronics Engineers (IEEE)
Pages	479 - 480
Number of pages	2
ISBN (Print)	1557526621
DOIs	https://doi.org/10.1109/CLEO.2001.948067
Publication status	Published - 6 May 2001

Structured keywords

Photonics and Quantum

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10.1109/CLEO.2001.948067

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@inproceedings{6b9bcf0837244bbb9249f782cd3b6fad,

title = "Material gain comparison for InGaAsP, AlGaInAs and InGaAsN for 1.3 micron laser diode",

abstract = "The material gain and transparency carrier density of semiconducting indium compounds and aluminum compounds were compared at room temperature. The analysis was made to determine the modulation response and threshold carrier density for laser diode applications. Aluminum gallium indium arsenide was found to have the highest peak differential gain and lowest carrier density.",

author = "JCL Yong and JM Rorison and IH White",

year = "2001",

month = may,

day = "6",

doi = "10.1109/CLEO.2001.948067",

language = "English",

isbn = "1557526621",

pages = "479 -- 480",

booktitle = "Conference on Lasers and Electro-Optics Europe (CLEO 2001), Baltimore, USA",

publisher = "Institute of Electrical and Electronics Engineers (IEEE)",

address = "United States",

}

Material gain comparison for InGaAsP, AlGaInAs and InGaAsN for 1.3 micron laser diode. / Yong, JCL; Rorison, JM; White, IH.
Conference on Lasers and Electro-Optics Europe (CLEO 2001), Baltimore, USA. Institute of Electrical and Electronics Engineers (IEEE), 2001. p. 479 - 480.

Research output: Chapter in Book/Report/Conference proceeding › Conference Contribution (Conference Proceeding)

TY - GEN

T1 - Material gain comparison for InGaAsP, AlGaInAs and InGaAsN for 1.3 micron laser diode

AU - Yong, JCL

AU - Rorison, JM

AU - White, IH

PY - 2001/5/6

Y1 - 2001/5/6

N2 - The material gain and transparency carrier density of semiconducting indium compounds and aluminum compounds were compared at room temperature. The analysis was made to determine the modulation response and threshold carrier density for laser diode applications. Aluminum gallium indium arsenide was found to have the highest peak differential gain and lowest carrier density.

AB - The material gain and transparency carrier density of semiconducting indium compounds and aluminum compounds were compared at room temperature. The analysis was made to determine the modulation response and threshold carrier density for laser diode applications. Aluminum gallium indium arsenide was found to have the highest peak differential gain and lowest carrier density.

U2 - 10.1109/CLEO.2001.948067

DO - 10.1109/CLEO.2001.948067

M3 - Conference Contribution (Conference Proceeding)

SN - 1557526621

SP - 479

EP - 480

BT - Conference on Lasers and Electro-Optics Europe (CLEO 2001), Baltimore, USA

PB - Institute of Electrical and Electronics Engineers (IEEE)

ER -

Material gain comparison for InGaAsP, AlGaInAs and InGaAsN for 1.3 micron laser diode

Abstract

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