Material gain of InGaNAs/GaAs single quantum wells with increased N concentration

N Vogiatzis, YN Qiu, JM Pozo, HC Wong, JM Rorison

Research output: Chapter in Book/Report/Conference proceedingConference Contribution (Conference Proceeding)

Translated title of the contributionMaterial gain of InGaNAs/GaAs single quantum wells with increased N concentration
Original languageEnglish
Title of host publicationUK Compound Semiconductors, Sheffield, UK
Publication statusPublished - 5 Jul 2006

Structured keywords

  • Photonics and Quantum

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