Material gain of InGaNAs/GaAs single quantum wells with increased N concentration

N Vogiatzis, YN Qiu, JM Pozo, HC Wong, JM Rorison

    Research output: Chapter in Book/Report/Conference proceeding › Conference Contribution (Conference Proceeding)

    Translated title of the contributionMaterial gain of InGaNAs/GaAs single quantum wells with increased N concentration
    Original languageEnglish
    Title of host publicationUK Compound Semiconductors, Sheffield, UK
    Publication statusPublished - 5 Jul 2006

    Research Groups and Themes

    • Photonics and Quantum

    Handle.net

    Cite this