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Material gain of InGaNAs/GaAs single quantum wells with increased N concentration

  • N Vogiatzis
  • , YN Qiu
  • , JM Pozo
  • , HC Wong
  • , JM Rorison

    Research output: Chapter in Book/Report/Conference proceeding › Conference Contribution (Conference Proceeding)

    Translated title of the contributionMaterial gain of InGaNAs/GaAs single quantum wells with increased N concentration
    Original languageEnglish
    Title of host publicationUK Compound Semiconductors, Sheffield, UK
    Publication statusPublished - 5 Jul 2006

    Research Groups and Themes

    • Photonics and Quantum

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