Measurement of temperature distribution in multifinger AlGaN/GaN heterostructure field-effect transistors using micro-Raman spectroscopy

M Kuball, S Rajasingam, A Sarua, MJ Uren, T Martin, BT Hughes, KP Hilton, RS Balmer

Research output: Contribution to journalArticle (Academic Journal)peer-review

145 Citations (Scopus)

Abstract

The temperature distribution in multifinger high-power AlGaN/GaN heterostructure field-effect transistors grown on SiC substrates was studied. Micro-Raman spectroscopy was used to measure channel temperature with 1 µm spatial resolution, not possible using infrared techniques. Thermal resistance values were determined for four different device layouts with varying number of fingers, finger width, and spacing. The experimental thermal resistance was in fair agreement to that predicted by three-dimensional finite difference heat dissipation simulations. Uncertainties in thermal properties of this device system made simulation less reliable than experiment.
Translated title of the contributionMeasurement of temperature distribution in multifinger AlGaN/GaN heterostructure field-effect transistors using micro-Raman spectroscopy
Original languageEnglish
Pages (from-to)124 - 126
Number of pages3
JournalApplied Physics Letters
Volume82 (1)
DOIs
Publication statusPublished - 6 Jan 2003

Bibliographical note

Publisher: American Institute of Physics

Structured keywords

  • CDTR

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