Measurement of temperature in active high-power AlGaN/GaN HFETs using Raman spectroscopy

MHH Kuball; JM Hayes; MJ Uren; T Martin; JCH Birbeck; RS Balmer; BT Hughes

doi:10.1109/55.974795

Measurement of temperature in active high-power AlGaN/GaN HFETs using Raman spectroscopy

MHH Kuball, JM Hayes, MJ Uren, T Martin, JCH Birbeck, RS Balmer, BT Hughes

School of Physics

Research output: Contribution to journal › Article (Academic Journal) › peer-review

294 Citations (Scopus)

Abstract

We report on the noninvasive measurement of temperature, i.e., self-heating effects, in active AlGaN/GaN HFETs grown on sapphire and SiC substrates. Micro-Raman spectroscopy was used to produce temperature maps with ≈1 μm spatial resolution and a temperature accuracy of better than 10°C. Significant temperature rises up to 180°C were measured in the device gate-drain opening. Results from a three-dimensional (3-D) heat dissipation model are in reasonably good agreement with the experimental data. Comparison of devices fabricated on sapphire and SiC substrates indicated that the SiC substrate devices had ~5 times lower thermal resistance

Translated title of the contribution	Measurement of temperature in active high-power AlGaN/GaN HFETs using Raman spectroscopy
Original language	English
Pages (from-to)	7 - 9
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	23 (1)
DOIs	https://doi.org/10.1109/55.974795
Publication status	Published - Jan 2002

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Publisher: Institute of Electrical and Electronic Engineers

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10.1109/55.974795

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title = "Measurement of temperature in active high-power AlGaN/GaN HFETs using Raman spectroscopy",

abstract = "We report on the noninvasive measurement of temperature, i.e., self-heating effects, in active AlGaN/GaN HFETs grown on sapphire and SiC substrates. Micro-Raman spectroscopy was used to produce temperature maps with ≈1 μm spatial resolution and a temperature accuracy of better than 10°C. Significant temperature rises up to 180°C were measured in the device gate-drain opening. Results from a three-dimensional (3-D) heat dissipation model are in reasonably good agreement with the experimental data. Comparison of devices fabricated on sapphire and SiC substrates indicated that the SiC substrate devices had ~5 times lower thermal resistance",

author = "MHH Kuball and JM Hayes and MJ Uren and T Martin and JCH Birbeck and RS Balmer and BT Hughes",

note = "Publisher: Institute of Electrical and Electronic Engineers",

year = "2002",

month = jan,

doi = "10.1109/55.974795",

language = "English",

volume = "23 (1)",

pages = "7 -- 9",

journal = "IEEE Electron Device Letters",

issn = "0741-3106",

publisher = "Institute of Electrical and Electronics Engineers (IEEE)",

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TY - JOUR

T1 - Measurement of temperature in active high-power AlGaN/GaN HFETs using Raman spectroscopy

AU - Kuball, MHH

AU - Hayes, JM

AU - Uren, MJ

AU - Martin, T

AU - Birbeck, JCH

AU - Balmer, RS

AU - Hughes, BT

N1 - Publisher: Institute of Electrical and Electronic Engineers

PY - 2002/1

Y1 - 2002/1

N2 - We report on the noninvasive measurement of temperature, i.e., self-heating effects, in active AlGaN/GaN HFETs grown on sapphire and SiC substrates. Micro-Raman spectroscopy was used to produce temperature maps with ≈1 μm spatial resolution and a temperature accuracy of better than 10°C. Significant temperature rises up to 180°C were measured in the device gate-drain opening. Results from a three-dimensional (3-D) heat dissipation model are in reasonably good agreement with the experimental data. Comparison of devices fabricated on sapphire and SiC substrates indicated that the SiC substrate devices had ~5 times lower thermal resistance

AB - We report on the noninvasive measurement of temperature, i.e., self-heating effects, in active AlGaN/GaN HFETs grown on sapphire and SiC substrates. Micro-Raman spectroscopy was used to produce temperature maps with ≈1 μm spatial resolution and a temperature accuracy of better than 10°C. Significant temperature rises up to 180°C were measured in the device gate-drain opening. Results from a three-dimensional (3-D) heat dissipation model are in reasonably good agreement with the experimental data. Comparison of devices fabricated on sapphire and SiC substrates indicated that the SiC substrate devices had ~5 times lower thermal resistance

U2 - 10.1109/55.974795

DO - 10.1109/55.974795

M3 - Article (Academic Journal)

VL - 23 (1)

SP - 7

EP - 9

JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

SN - 0741-3106

ER -

Measurement of temperature in active high-power AlGaN/GaN HFETs using Raman spectroscopy

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