Measurement of temperature in active high-power AlGaN/GaN HFETs using Raman spectroscopy

MHH Kuball, JM Hayes, MJ Uren, T Martin, JCH Birbeck, RS Balmer, BT Hughes

Research output: Contribution to journalArticle (Academic Journal)peer-review

280 Citations (Scopus)

Abstract

We report on the noninvasive measurement of temperature, i.e., self-heating effects, in active AlGaN/GaN HFETs grown on sapphire and SiC substrates. Micro-Raman spectroscopy was used to produce temperature maps with ≈1 μm spatial resolution and a temperature accuracy of better than 10°C. Significant temperature rises up to 180°C were measured in the device gate-drain opening. Results from a three-dimensional (3-D) heat dissipation model are in reasonably good agreement with the experimental data. Comparison of devices fabricated on sapphire and SiC substrates indicated that the SiC substrate devices had ~5 times lower thermal resistance
Translated title of the contributionMeasurement of temperature in active high-power AlGaN/GaN HFETs using Raman spectroscopy
Original languageEnglish
Pages (from-to)7 - 9
Number of pages3
JournalIEEE Electron Device Letters
Volume23 (1)
DOIs
Publication statusPublished - Jan 2002

Bibliographical note

Publisher: Institute of Electrical and Electronic Engineers

Structured keywords

  • CDTR

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