Abstract
We report on the noninvasive measurement of temperature, i.e., self-heating effects, in active AlGaN/GaN HFETs grown on sapphire and SiC substrates. Micro-Raman spectroscopy was used to produce temperature maps with ≈1 μm spatial resolution and a temperature accuracy of better than 10°C. Significant temperature rises up to 180°C were measured in the device gate-drain opening. Results from a three-dimensional (3-D) heat dissipation model are in reasonably good agreement with the experimental data. Comparison of devices fabricated on sapphire and SiC substrates indicated that the SiC substrate devices had ~5 times lower thermal resistance
Translated title of the contribution | Measurement of temperature in active high-power AlGaN/GaN HFETs using Raman spectroscopy |
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Original language | English |
Pages (from-to) | 7 - 9 |
Number of pages | 3 |
Journal | IEEE Electron Device Letters |
Volume | 23 (1) |
DOIs | |
Publication status | Published - Jan 2002 |
Bibliographical note
Publisher: Institute of Electrical and Electronic EngineersStructured keywords
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