Measurement of the Knight field and local nuclear dipole-dipole field in an InGaAs/GaAs quantum dot ensemble

T Auer, R Oulton, A Bauschulte, DR Yakovlev, M Bayer, S Yu Verbin, RV Cherbunin, D Reuter, A Wieck

Research output: Contribution to journalArticle (Academic Journal)peer-review

13 Citations (Scopus)

Abstract

We present a comprehensive investigation of the electron-nuclear system of negatively charged InGaAs/GaAs self-assembled quantum dots (QDs) under the influence of weak external magnetic fields (up to 3 mT). We demonstrate that, in contrast to conventional semiconductor systems, these small fields have a profound influence on the electron spin dynamics, via the hyperfine interaction. QDs, with their comparatively limited number of nuclei, present electron-nuclear behavior that is unique to low-dimensional systems. We show that the conventional Hanle effect used to measure electron-spin relaxation times, for example, cannot be used in these systems when the spin lifetimes are long. An individual nucleus in the QD is subject to milli-Tesla effective fields, arising from the interaction with its nearest neighbors and with the electronic Knight field. The alignment of each nucleus is influenced by application of external fields of the same magnitude. A polarized nuclear system, which may have an effective field strength of several Tesla, may easily be influenced by these milli-Tesla fields. This in turn has a dramatic effect on the electron-spin dynamics and we use this technique to gain a measure of both the dipole-dipole field and the maximum Knight field in our system thus allowing us to estimate the maximum Overhauser field that may be generated at zero external magnetic field. We also show that one may fine tune the angle which the Overhauser field makes with the optical axis.
Translated title of the contributionMeasurement of the Knight field and local nuclear dipole-dipole field in an InGaAs/GaAs quantum dot ensemble
Original languageEnglish
Pages (from-to)205303-1 - 205303-15
Number of pages15
JournalPhysical Review B: Condensed Matter and Materials Physics
Volume80
Issue number20
DOIs
Publication statusPublished - Nov 2009

Bibliographical note

Publisher: American Physical Society

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