Measurements and Review of Failure Mechanisms and Reliability Constraints of 4H-SiC Power MOSFETs Under Short Circuit Events

Renze Yu; Saeed Jahdi; Olayiwola Alatise; Jose Ortiz-Gonzalez; Sai Priya Munagala; Nick Simpson; Phil Mellor

doi:10.1109/TDMR.2023.3316928

Measurements and Review of Failure Mechanisms and Reliability Constraints of 4H-SiC Power MOSFETs Under Short Circuit Events

Renze Yu^*, Saeed Jahdi, Olayiwola Alatise, Jose Ortiz-Gonzalez, Sai Priya Munagala, Nick Simpson, Phil Mellor

^*Corresponding author for this work

Research output: Contribution to journal › Article (Academic Journal) › peer-review

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Abstract

The reliability of the SiC MOSFET has always been a factor hindering the device application, especially under high voltage and high current conditions, such as in the short circuit events. This paper experimentally reviews the failure mechanisms caused by destructive short circuit impulses, and investigates the degradation patterns of key electrical parameters under repetitive short circuit events. The impact of test parameters on the short circuit reliability of SiC MOSFET has been analyzed. Approaches to characterize the electrical-thermal-mechanical stress during the short circuit period and advanced test methods are highlighted. Finally, the constraints from the standpoint of both manufacturers and users have been presented, including comparison of current SiC MOSFET devices, reliability evaluation of parallel SiC MOSFET devices, reliability improvement of the chip, performance improvement of protection circuits, and reliability assessment of SiC MOSFET devices under application-representative stress.

Original language	English
Pages (from-to)	544 - 563
Number of pages	20
Journal	IEEE Transactions on Device and Materials Reliability
Volume	23
Issue number	4
Early online date	18 Sept 2023
DOIs	https://doi.org/10.1109/TDMR.2023.3316928
Publication status	Published - 1 Dec 2023

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Funding Information:
This work was supported by the U.K. Engineering and Physical Research Council (EPSRC) under the Supergen Energy Networks Hub Initiative Under Grant EP/S00078X/2.

Publisher Copyright:
© 2023 IEEE.

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title = "Measurements and Review of Failure Mechanisms and Reliability Constraints of 4H-SiC Power MOSFETs Under Short Circuit Events",

abstract = "The reliability of the SiC MOSFET has always been a factor hindering the device application, especially under high voltage and high current conditions, such as in the short circuit events. This paper experimentally reviews the failure mechanisms caused by destructive short circuit impulses, and investigates the degradation patterns of key electrical parameters under repetitive short circuit events. The impact of test parameters on the short circuit reliability of SiC MOSFET has been analyzed. Approaches to characterize the electrical-thermal-mechanical stress during the short circuit period and advanced test methods are highlighted. Finally, the constraints from the standpoint of both manufacturers and users have been presented, including comparison of current SiC MOSFET devices, reliability evaluation of parallel SiC MOSFET devices, reliability improvement of the chip, performance improvement of protection circuits, and reliability assessment of SiC MOSFET devices under application-representative stress.",

author = "Renze Yu and Saeed Jahdi and Olayiwola Alatise and Jose Ortiz-Gonzalez and Munagala, {Sai Priya} and Nick Simpson and Phil Mellor",

note = "Funding Information: This work was supported by the U.K. Engineering and Physical Research Council (EPSRC) under the Supergen Energy Networks Hub Initiative Under Grant EP/S00078X/2. Publisher Copyright: {\textcopyright} 2023 IEEE.",

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AU - Yu, Renze

AU - Jahdi, Saeed

AU - Alatise, Olayiwola

AU - Ortiz-Gonzalez, Jose

AU - Munagala, Sai Priya

AU - Simpson, Nick

AU - Mellor, Phil

N1 - Funding Information: This work was supported by the U.K. Engineering and Physical Research Council (EPSRC) under the Supergen Energy Networks Hub Initiative Under Grant EP/S00078X/2. Publisher Copyright: © 2023 IEEE.

PY - 2023/12/1

Y1 - 2023/12/1

N2 - The reliability of the SiC MOSFET has always been a factor hindering the device application, especially under high voltage and high current conditions, such as in the short circuit events. This paper experimentally reviews the failure mechanisms caused by destructive short circuit impulses, and investigates the degradation patterns of key electrical parameters under repetitive short circuit events. The impact of test parameters on the short circuit reliability of SiC MOSFET has been analyzed. Approaches to characterize the electrical-thermal-mechanical stress during the short circuit period and advanced test methods are highlighted. Finally, the constraints from the standpoint of both manufacturers and users have been presented, including comparison of current SiC MOSFET devices, reliability evaluation of parallel SiC MOSFET devices, reliability improvement of the chip, performance improvement of protection circuits, and reliability assessment of SiC MOSFET devices under application-representative stress.

AB - The reliability of the SiC MOSFET has always been a factor hindering the device application, especially under high voltage and high current conditions, such as in the short circuit events. This paper experimentally reviews the failure mechanisms caused by destructive short circuit impulses, and investigates the degradation patterns of key electrical parameters under repetitive short circuit events. The impact of test parameters on the short circuit reliability of SiC MOSFET has been analyzed. Approaches to characterize the electrical-thermal-mechanical stress during the short circuit period and advanced test methods are highlighted. Finally, the constraints from the standpoint of both manufacturers and users have been presented, including comparison of current SiC MOSFET devices, reliability evaluation of parallel SiC MOSFET devices, reliability improvement of the chip, performance improvement of protection circuits, and reliability assessment of SiC MOSFET devices under application-representative stress.

UR - https://doi.org/10.1109/TDMR.2023.3316928

U2 - 10.1109/TDMR.2023.3316928

DO - 10.1109/TDMR.2023.3316928

M3 - Article (Academic Journal)

SN - 1530-4388

VL - 23

SP - 544

EP - 563

JO - IEEE Transactions on Device and Materials Reliability

JF - IEEE Transactions on Device and Materials Reliability

IS - 4

ER -

Measurements and Review of Failure Mechanisms and Reliability Constraints of 4H-SiC Power MOSFETs Under Short Circuit Events

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