Measuring the thermal conductivity of the GaN buffer layer in AlGaN/GaN HEMTs

Maire Power, James W Pomeroy, Yohei Otoki, Takeshi Tanaka, Jiro Wada, Masaaki Kuzuhara, Wolfgang Jantz, Andrew Souzis, Martin H H Kuball

Research output: Contribution to journalArticle (Academic Journal)peer-review

11 Citations (Scopus)
366 Downloads (Pure)

Abstract

The thermal conductivity of the GaN buffer layer in AlGaN/GaN devices can be determined by measuring the vertical temperature gradient through this layer. In this work, diamond micro-thermometers and standard micro-Raman thermography were used to determine the surface and volumetric depth average temperature, respectively, of the carbon-doped GaN buffer layer in AlGaN/GaN transistors. By comparing measured temperatures with finite element thermal simulation, a thermal conductivity of 200 ± 20 Wm−1 K−1 was obtained for a carbon-doped GaN layer with a doping concentration of 1017 cm−3.
Original languageEnglish
Pages (from-to)1742-1745
Number of pages4
Journalphysica status solidi (a)
Volume212
Issue number8
Early online date23 Feb 2015
DOIs
Publication statusPublished - 10 Aug 2015

Bibliographical note

Date of Acceptance: 06/02/2015

Structured keywords

  • CDTR

Keywords

  • diamond
  • GaN
  • high electron mobility transistors
  • micro-Raman thermography
  • micro-thermometers
  • thermal conductivity

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