Measuring the thermal conductivity of the GaN buffer layer in AlGaN/GaN HEMTs: Effect of carbon and iron doping

Maire Power, James Pomeroy, Yohei Otoki, Takeshi Tanaka, Jiro Wada, Masaaki Kuzuhara, Wolfgang Jantz, Andrew Souzis, Martin Kuball

Research output: Chapter in Book/Report/Conference proceedingConference Contribution (Conference Proceeding)

1 Citation (Scopus)
33 Downloads (Pure)

Abstract

A thermal conductivity of 200±20 Wm-1K -1 has been determined for the carbon-doped (concentration of 1017 cm-3) GaN buffer layer of an AlGaN/GaN HEMT using new experimental techniques. Micro-Raman thermography combined with diamond micro-thermometry were used to measure the vertical temperature gradient through the device layers and finite element thermal simulation was fit to the measured temperatures to determine the GaN layer thermal conductivity. This technique is beneficial as it can be used on standard device wafers with no additional test structures required. Furthermore we have found that the thermal conductivity of iron-doped (concentration of 1018 cm-3) and carbon-doped (concentration of 1017 cm-3) buffer layers studied are very similar.
Original languageEnglish
Title of host publication2016 International Conference on Compound Semiconductor Manufacturing Technology, May 16-19 2015, Miami, FL, USA
Pages147-150
Number of pages4
Publication statusPublished - May 2015
Event2015 International Conference on Compound Semiconductor Manufacturing Technology, May 16-19 2015, Miami, FL, USA - Hyatt Regency Miami, Miami, FL, United States
Duration: 16 May 201519 May 2015

Conference

Conference2015 International Conference on Compound Semiconductor Manufacturing Technology, May 16-19 2015, Miami, FL, USA
CountryUnited States
CityMiami, FL
Period16/05/1519/05/15

Structured keywords

  • CDTR

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