Measuring the thermal conductivity of the GaN buffer layer in AlGaN/GaN HEMTs

Maire Power; James W Pomeroy; Yohei Otoki; Takeshi Tanaka; Jiro Wada; Masaaki  Kuzuhara; Wolfgang  Jantz; Andrew Souzis; Martin H H Kuball

doi:10.1002/pssa.201431788

Measuring the thermal conductivity of the GaN buffer layer in AlGaN/GaN HEMTs

Maire Power, James W Pomeroy, Yohei Otoki, Takeshi Tanaka, Jiro Wada, Masaaki Kuzuhara, Wolfgang Jantz, Andrew Souzis, Martin H H Kuball

School of Physics

Research output: Contribution to journal › Article (Academic Journal) › peer-review

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Abstract

The thermal conductivity of the GaN buffer layer in AlGaN/GaN devices can be determined by measuring the vertical temperature gradient through this layer. In this work, diamond micro-thermometers and standard micro-Raman thermography were used to determine the surface and volumetric depth average temperature, respectively, of the carbon-doped GaN buffer layer in AlGaN/GaN transistors. By comparing measured temperatures with finite element thermal simulation, a thermal conductivity of 200 ± 20 Wm⁻¹ K⁻¹ was obtained for a carbon-doped GaN layer with a doping concentration of 10¹⁷ cm⁻³.

Original language	English
Pages (from-to)	1742-1745
Number of pages	4
Journal	physica status solidi (a)
Volume	212
Issue number	8
Early online date	23 Feb 2015
DOIs	https://doi.org/10.1002/pssa.201431788
Publication status	Published - 10 Aug 2015

Bibliographical note

Date of Acceptance: 06/02/2015

Research Groups and Themes

CDTR

Keywords

diamond
GaN
high electron mobility transistors
micro-Raman thermography
micro-thermometers
thermal conductivity

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10.1002/pssa.201431788

Measuring the thermal conductivity of the GaN buffer layer in AlGaN/GaN HEMTs
© 2015 WILEY−VCH Verlag GmbH & Co. KGaA, Weinheim
Accepted author manuscript, 218 KBLicence: Unspecified

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title = "Measuring the thermal conductivity of the GaN buffer layer in AlGaN/GaN HEMTs",

abstract = "The thermal conductivity of the GaN buffer layer in AlGaN/GaN devices can be determined by measuring the vertical temperature gradient through this layer. In this work, diamond micro-thermometers and standard micro-Raman thermography were used to determine the surface and volumetric depth average temperature, respectively, of the carbon-doped GaN buffer layer in AlGaN/GaN transistors. By comparing measured temperatures with finite element thermal simulation, a thermal conductivity of 200 ± 20 Wm−1 K−1 was obtained for a carbon-doped GaN layer with a doping concentration of 1017 cm−3.",

keywords = "diamond, GaN, high electron mobility transistors, micro-Raman thermography, micro-thermometers, thermal conductivity",

author = "Maire Power and Pomeroy, \{James W\} and Yohei Otoki and Takeshi Tanaka and Jiro Wada and Masaaki Kuzuhara and Wolfgang Jantz and Andrew Souzis and Kuball, \{Martin H H\}",

note = "Date of Acceptance: 06/02/2015",

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doi = "10.1002/pssa.201431788",

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T1 - Measuring the thermal conductivity of the GaN buffer layer in AlGaN/GaN HEMTs

AU - Power, Maire

AU - Pomeroy, James W

AU - Otoki, Yohei

AU - Tanaka, Takeshi

AU - Wada, Jiro

AU - Kuzuhara, Masaaki

AU - Jantz, Wolfgang

AU - Souzis, Andrew

AU - Kuball, Martin H H

N1 - Date of Acceptance: 06/02/2015

PY - 2015/8/10

Y1 - 2015/8/10

N2 - The thermal conductivity of the GaN buffer layer in AlGaN/GaN devices can be determined by measuring the vertical temperature gradient through this layer. In this work, diamond micro-thermometers and standard micro-Raman thermography were used to determine the surface and volumetric depth average temperature, respectively, of the carbon-doped GaN buffer layer in AlGaN/GaN transistors. By comparing measured temperatures with finite element thermal simulation, a thermal conductivity of 200 ± 20 Wm−1 K−1 was obtained for a carbon-doped GaN layer with a doping concentration of 1017 cm−3.

AB - The thermal conductivity of the GaN buffer layer in AlGaN/GaN devices can be determined by measuring the vertical temperature gradient through this layer. In this work, diamond micro-thermometers and standard micro-Raman thermography were used to determine the surface and volumetric depth average temperature, respectively, of the carbon-doped GaN buffer layer in AlGaN/GaN transistors. By comparing measured temperatures with finite element thermal simulation, a thermal conductivity of 200 ± 20 Wm−1 K−1 was obtained for a carbon-doped GaN layer with a doping concentration of 1017 cm−3.

KW - diamond

KW - GaN

KW - high electron mobility transistors

KW - micro-Raman thermography

KW - micro-thermometers

KW - thermal conductivity

U2 - 10.1002/pssa.201431788

DO - 10.1002/pssa.201431788

M3 - Article (Academic Journal)

SN - 1862-6300

VL - 212

SP - 1742

EP - 1745

JO - physica status solidi (a)

JF - physica status solidi (a)

IS - 8

ER -

Measuring the thermal conductivity of the GaN buffer layer in AlGaN/GaN HEMTs

Abstract

Bibliographical note

Research Groups and Themes

Keywords

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