Metal-to-insulator transition in anatase TiO2 thin films induced by growth rate modulation

T. Tachikawa*, M. Minohara, Y. Nakanishi, Y. Hikita, M. Yoshita, H. Akiyama, C. Bell, H. Y. Hwang, Chris Bell

*Corresponding author for this work

Research output: Contribution to journalArticle (Academic Journal)peer-review

16 Citations (Scopus)

Abstract

We demonstrate control of the carrier density of single phase anatase TiO2 thin films by nearly two orders of magnitude by modulating the growth kinetics during pulsed laser deposition, under fixed thermodynamic conditions. The resistivity and the intensity of the photoluminescence spectra of these TiO2 samples, both of which correlate with the number of oxygen vacancies, are shown to depend strongly on the growth rate. A quantitative model is used to explain the carrier density changes. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4733724]

Original languageEnglish
Article number022104
Number of pages4
JournalApplied Physics Letters
Volume101
Issue number2
DOIs
Publication statusPublished - 9 Jul 2012

Keywords

  • PULSED-LASER DEPOSITION
  • TITANIUM-DIOXIDE
  • ABLATION
  • PHOTOLUMINESCENCE
  • LUMINESCENCE
  • TEMPERATURE
  • PRESSURE
  • CRYSTAL
  • OXIDE

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