Metal-to-insulator transition in anatase TiO2 thin films induced by growth rate modulation

T. Tachikawa; M. Minohara; Y. Nakanishi; Y. Hikita; M. Yoshita; H. Akiyama; C. Bell; H. Y. Hwang; Chris Bell

doi:10.1063/1.4733724

Metal-to-insulator transition in anatase TiO2 thin films induced by growth rate modulation

T. Tachikawa^*, M. Minohara, Y. Nakanishi, Y. Hikita, M. Yoshita, H. Akiyama, C. Bell, H. Y. Hwang, Chris Bell

^*Corresponding author for this work

School of Physics

Research output: Contribution to journal › Article (Academic Journal) › peer-review

18 Citations (Scopus)

Abstract

We demonstrate control of the carrier density of single phase anatase TiO2 thin films by nearly two orders of magnitude by modulating the growth kinetics during pulsed laser deposition, under fixed thermodynamic conditions. The resistivity and the intensity of the photoluminescence spectra of these TiO2 samples, both of which correlate with the number of oxygen vacancies, are shown to depend strongly on the growth rate. A quantitative model is used to explain the carrier density changes. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4733724]

Original language	English
Article number	022104
Number of pages	4
Journal	Applied Physics Letters
Volume	101
Issue number	2
DOIs	https://doi.org/10.1063/1.4733724
Publication status	Published - 9 Jul 2012

Keywords

PULSED-LASER DEPOSITION
TITANIUM-DIOXIDE
ABLATION
PHOTOLUMINESCENCE
LUMINESCENCE
TEMPERATURE
PRESSURE
CRYSTAL
OXIDE

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@article{23420112935843f9b7affb47e85e21af,

title = "Metal-to-insulator transition in anatase TiO2 thin films induced by growth rate modulation",

abstract = "We demonstrate control of the carrier density of single phase anatase TiO2 thin films by nearly two orders of magnitude by modulating the growth kinetics during pulsed laser deposition, under fixed thermodynamic conditions. The resistivity and the intensity of the photoluminescence spectra of these TiO2 samples, both of which correlate with the number of oxygen vacancies, are shown to depend strongly on the growth rate. A quantitative model is used to explain the carrier density changes. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4733724]",

keywords = "PULSED-LASER DEPOSITION, TITANIUM-DIOXIDE, ABLATION, PHOTOLUMINESCENCE, LUMINESCENCE, TEMPERATURE, PRESSURE, CRYSTAL, OXIDE",

author = "T. Tachikawa and M. Minohara and Y. Nakanishi and Y. Hikita and M. Yoshita and H. Akiyama and C. Bell and Hwang, {H. Y.} and Chris Bell",

year = "2012",

month = jul,

day = "9",

doi = "10.1063/1.4733724",

language = "English",

volume = "101",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics (AIP)",

number = "2",

}

TY - JOUR

T1 - Metal-to-insulator transition in anatase TiO2 thin films induced by growth rate modulation

AU - Tachikawa, T.

AU - Minohara, M.

AU - Nakanishi, Y.

AU - Hikita, Y.

AU - Yoshita, M.

AU - Akiyama, H.

AU - Bell, C.

AU - Hwang, H. Y.

AU - Bell, Chris

PY - 2012/7/9

Y1 - 2012/7/9

N2 - We demonstrate control of the carrier density of single phase anatase TiO2 thin films by nearly two orders of magnitude by modulating the growth kinetics during pulsed laser deposition, under fixed thermodynamic conditions. The resistivity and the intensity of the photoluminescence spectra of these TiO2 samples, both of which correlate with the number of oxygen vacancies, are shown to depend strongly on the growth rate. A quantitative model is used to explain the carrier density changes. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4733724]

AB - We demonstrate control of the carrier density of single phase anatase TiO2 thin films by nearly two orders of magnitude by modulating the growth kinetics during pulsed laser deposition, under fixed thermodynamic conditions. The resistivity and the intensity of the photoluminescence spectra of these TiO2 samples, both of which correlate with the number of oxygen vacancies, are shown to depend strongly on the growth rate. A quantitative model is used to explain the carrier density changes. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4733724]

KW - PULSED-LASER DEPOSITION

KW - TITANIUM-DIOXIDE

KW - ABLATION

KW - PHOTOLUMINESCENCE

KW - LUMINESCENCE

KW - TEMPERATURE

KW - PRESSURE

KW - CRYSTAL

KW - OXIDE

U2 - 10.1063/1.4733724

DO - 10.1063/1.4733724

M3 - Article (Academic Journal)

SN - 0003-6951

VL - 101

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 2

M1 - 022104

ER -

Metal-to-insulator transition in anatase TiO2 thin films induced by growth rate modulation

Abstract

Keywords

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