Micro-Raman spectroscopy as a voltage probe in AlGaN/GaN heterostructure devices: Determination of buffer resistances

R. J. T. Simms, M. J. Uren, T. Martin, J. Powell, U. Forsberg, A. Lundskog, A. Kakanakova-Georgieva, E. Janzen, M. Kuball

Research output: Contribution to journalArticle (Academic Journal)peer-review

1 Citation (Scopus)

Abstract

A time-resolved micro-Raman technique was developed to probe the transient voltage in the GaN buffer layer of AlGaN/GaN heterostructure devices. The transient potential distribution under Ohmic contacts of devices behaved like a capacitance-resistance coupled network, with a decrease in amplitude and phase shift of the potential as a function of operating voltage frequency. This phenomenon was used to extract a value of 0.6 M Omega/square for sheet resistance of the AIN nucleation layer at the GaN/SiC interface from the characteristic RC value of the network. This demonstrates the effectiveness of this voltage probe technique as a non-invasive method of characterizing nucleation layers. (C) 2010 Elsevier Ltd. All rights reserved.

Original languageEnglish
Pages (from-to)5-7
Number of pages3
JournalSolid-State Electronics
Volume55
Issue number1
DOIs
Publication statusPublished - Jan 2011

Bibliographical note

Simms, R. J. T. Uren, M. J. Martin, T. Powell, J. Forsberg, U. Lundskog, A. Kakanakova-Georgieva, A. Janzen, E. Kuball, M.

Structured keywords

  • CDTR

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