Micro-Raman spectroscopy as a voltage probe in AlGaN/GaN heterostructure devices: Determination of buffer resistances

R. J. T. Simms; M. J. Uren; T. Martin; J. Powell; U. Forsberg; A. Lundskog; A. Kakanakova-Georgieva; E. Janzen; M. Kuball

doi:10.1016/j.sse.2010.09.008

Micro-Raman spectroscopy as a voltage probe in AlGaN/GaN heterostructure devices: Determination of buffer resistances

R. J. T. Simms, M. J. Uren, T. Martin, J. Powell, U. Forsberg, A. Lundskog, A. Kakanakova-Georgieva, E. Janzen, M. Kuball

School of Physics

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Abstract

A time-resolved micro-Raman technique was developed to probe the transient voltage in the GaN buffer layer of AlGaN/GaN heterostructure devices. The transient potential distribution under Ohmic contacts of devices behaved like a capacitance-resistance coupled network, with a decrease in amplitude and phase shift of the potential as a function of operating voltage frequency. This phenomenon was used to extract a value of 0.6 M Omega/square for sheet resistance of the AIN nucleation layer at the GaN/SiC interface from the characteristic RC value of the network. This demonstrates the effectiveness of this voltage probe technique as a non-invasive method of characterizing nucleation layers. (C) 2010 Elsevier Ltd. All rights reserved.

Original language	English
Pages (from-to)	5-7
Number of pages	3
Journal	Solid-State Electronics
Volume	55
Issue number	1
DOIs	https://doi.org/10.1016/j.sse.2010.09.008
Publication status	Published - Jan 2011

Bibliographical note

Simms, R. J. T. Uren, M. J. Martin, T. Powell, J. Forsberg, U. Lundskog, A. Kakanakova-Georgieva, A. Janzen, E. Kuball, M.

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title = "Micro-Raman spectroscopy as a voltage probe in AlGaN/GaN heterostructure devices: Determination of buffer resistances",

abstract = "A time-resolved micro-Raman technique was developed to probe the transient voltage in the GaN buffer layer of AlGaN/GaN heterostructure devices. The transient potential distribution under Ohmic contacts of devices behaved like a capacitance-resistance coupled network, with a decrease in amplitude and phase shift of the potential as a function of operating voltage frequency. This phenomenon was used to extract a value of 0.6 M Omega/square for sheet resistance of the AIN nucleation layer at the GaN/SiC interface from the characteristic RC value of the network. This demonstrates the effectiveness of this voltage probe technique as a non-invasive method of characterizing nucleation layers. (C) 2010 Elsevier Ltd. All rights reserved.",

author = "Simms, {R. J. T.} and Uren, {M. J.} and T. Martin and J. Powell and U. Forsberg and A. Lundskog and A. Kakanakova-Georgieva and E. Janzen and M. Kuball",

note = "Simms, R. J. T. Uren, M. J. Martin, T. Powell, J. Forsberg, U. Lundskog, A. Kakanakova-Georgieva, A. Janzen, E. Kuball, M.",

year = "2011",

month = jan,

doi = "10.1016/j.sse.2010.09.008",

language = "English",

volume = "55",

pages = "5--7",

journal = "Solid-State Electronics",

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T1 - Micro-Raman spectroscopy as a voltage probe in AlGaN/GaN heterostructure devices: Determination of buffer resistances

AU - Simms, R. J. T.

AU - Uren, M. J.

AU - Martin, T.

AU - Powell, J.

AU - Forsberg, U.

AU - Lundskog, A.

AU - Kakanakova-Georgieva, A.

AU - Janzen, E.

AU - Kuball, M.

N1 - Simms, R. J. T. Uren, M. J. Martin, T. Powell, J. Forsberg, U. Lundskog, A. Kakanakova-Georgieva, A. Janzen, E. Kuball, M.

PY - 2011/1

Y1 - 2011/1

N2 - A time-resolved micro-Raman technique was developed to probe the transient voltage in the GaN buffer layer of AlGaN/GaN heterostructure devices. The transient potential distribution under Ohmic contacts of devices behaved like a capacitance-resistance coupled network, with a decrease in amplitude and phase shift of the potential as a function of operating voltage frequency. This phenomenon was used to extract a value of 0.6 M Omega/square for sheet resistance of the AIN nucleation layer at the GaN/SiC interface from the characteristic RC value of the network. This demonstrates the effectiveness of this voltage probe technique as a non-invasive method of characterizing nucleation layers. (C) 2010 Elsevier Ltd. All rights reserved.

AB - A time-resolved micro-Raman technique was developed to probe the transient voltage in the GaN buffer layer of AlGaN/GaN heterostructure devices. The transient potential distribution under Ohmic contacts of devices behaved like a capacitance-resistance coupled network, with a decrease in amplitude and phase shift of the potential as a function of operating voltage frequency. This phenomenon was used to extract a value of 0.6 M Omega/square for sheet resistance of the AIN nucleation layer at the GaN/SiC interface from the characteristic RC value of the network. This demonstrates the effectiveness of this voltage probe technique as a non-invasive method of characterizing nucleation layers. (C) 2010 Elsevier Ltd. All rights reserved.

U2 - 10.1016/j.sse.2010.09.008

DO - 10.1016/j.sse.2010.09.008

M3 - Article (Academic Journal)

VL - 55

SP - 5

EP - 7

JO - Solid-State Electronics

JF - Solid-State Electronics

IS - 1

ER -

Micro-Raman spectroscopy as a voltage probe in AlGaN/GaN heterostructure devices: Determination of buffer resistances

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