Micro-Raman temperature measurements for electric field assessment in active AlGaN - GaN HFETs

S Rajasingam, JW Pomeroy, M Kuball, MJ Uren, T Martin, DC Herbert, KP Hilton, RS Balmer

Research output: Contribution to journalArticle (Academic Journal)peer-review

77 Citations (Scopus)

Abstract

Temperature profiles in the source/drain (S/D) opening of a single finger AlGaN-GaN heterostructure field-effect transistor wire studied at increasing S/D voltages by micro-Raman spectroscopy with
Translated title of the contributionMicro-Raman temperature measurements for electric field assessment in active AlGaN - GaN HFETs
Original languageEnglish
Pages (from-to)456 - 458
Number of pages3
JournalIEEE Electron Device Letters
Volume25 (7)
Publication statusPublished - 2004

Bibliographical note

Publisher: IEEE-Inst. Electrical Electronics Engineers Inc

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