Abstract
Temperature profiles in the source/drain (S/D) opening of a single finger AlGaN-GaN heterostructure field-effect transistor wire studied at increasing S/D voltages by micro-Raman spectroscopy with
| Translated title of the contribution | Micro-Raman temperature measurements for electric field assessment in active AlGaN - GaN HFETs |
|---|---|
| Original language | English |
| Pages (from-to) | 456 - 458 |
| Number of pages | 3 |
| Journal | IEEE Electron Device Letters |
| Volume | 25 (7) |
| Publication status | Published - 2004 |