Micro-Raman temperature measurements for electric field assessment in active AlGaN - GaN HFETs

S Rajasingam; JW Pomeroy; M Kuball; MJ Uren; T Martin; DC Herbert; KP Hilton; RS Balmer

Micro-Raman temperature measurements for electric field assessment in active AlGaN - GaN HFETs

S Rajasingam, JW Pomeroy, M Kuball, MJ Uren, T Martin, DC Herbert, KP Hilton, RS Balmer

School of Physics

Research output: Contribution to journal › Article (Academic Journal) › peer-review

98 Citations (Scopus)

Abstract

Temperature profiles in the source/drain (S/D) opening of a single finger AlGaN-GaN heterostructure field-effect transistor wire studied at increasing S/D voltages by micro-Raman spectroscopy with

Translated title of the contribution	Micro-Raman temperature measurements for electric field assessment in active AlGaN - GaN HFETs
Original language	English
Pages (from-to)	456 - 458
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	25 (7)
Publication status	Published - 2004

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Publisher: IEEE-Inst. Electrical Electronics Engineers Inc

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@article{c1022f8793684db69fa590fddeddd94c,

title = "Micro-Raman temperature measurements for electric field assessment in active AlGaN - GaN HFETs",

abstract = "Temperature profiles in the source/drain (S/D) opening of a single finger AlGaN-GaN heterostructure field-effect transistor wire studied at increasing S/D voltages by micro-Raman spectroscopy with ",

author = "S Rajasingam and JW Pomeroy and M Kuball and MJ Uren and T Martin and DC Herbert and KP Hilton and RS Balmer",

note = "Publisher: IEEE-Inst. Electrical Electronics Engineers Inc",

year = "2004",

language = "English",

volume = "25 (7)",

pages = "456 -- 458",

journal = "IEEE Electron Device Letters",

issn = "1558-0563",

publisher = "Institute of Electrical and Electronics Engineers (IEEE)",

}

TY - JOUR

T1 - Micro-Raman temperature measurements for electric field assessment in active AlGaN - GaN HFETs

AU - Rajasingam, S

AU - Pomeroy, JW

AU - Kuball, M

AU - Uren, MJ

AU - Martin, T

AU - Herbert, DC

AU - Hilton, KP

AU - Balmer, RS

N1 - Publisher: IEEE-Inst. Electrical Electronics Engineers Inc

PY - 2004

Y1 - 2004

N2 - Temperature profiles in the source/drain (S/D) opening of a single finger AlGaN-GaN heterostructure field-effect transistor wire studied at increasing S/D voltages by micro-Raman spectroscopy with

AB - Temperature profiles in the source/drain (S/D) opening of a single finger AlGaN-GaN heterostructure field-effect transistor wire studied at increasing S/D voltages by micro-Raman spectroscopy with

M3 - Article (Academic Journal)

SN - 1558-0563

VL - 25 (7)

SP - 456

EP - 458

JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

ER -

Micro-Raman temperature measurements for electric field assessment in active AlGaN - GaN HFETs

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