Microstructure of InxGa1-xN nanorods grown by molecular beam epitaxy

Richard Webster, Queenie Soundararajah, Ian Griffiths, David Cherns, Sergei V. Novikov, C. Thomas Foxon

Research output: Contribution to journalArticle (Academic Journal)peer-review

1 Citation (Scopus)


Transmission electron microscopy is used to examine the structure and composition of In x Ga 1− x N nanorods grown by plasma-assisted molecular beam epitaxy. The results confirm a core–shell structure with an In-rich core and In-poor shell resulting from axial and lateral growth sectors respectively. Atomic resolution mapping by energy-dispersive x-ray microanalysis and high angle annular dark field imaging show that both the core and the shell are decomposed into Ga-rich and In-rich platelets parallel to their respective growth surfaces. It is argued that platelet formation occurs at the surfaces, through the lateral expansion of surface steps. Studies of nanorods with graded composition show that decomposition ceases for x ≥ 0.8 and the ratio of growth rates, shell:core, decreases with increasing In concentration.
Original languageEnglish
Pages (from-to)114014
Number of pages5
JournalSemiconductor Science and Technology
Issue number11
Publication statusPublished - 2015

Fingerprint Dive into the research topics of 'Microstructure of InxGa1-xN nanorods grown by molecular beam epitaxy'. Together they form a unique fingerprint.

Cite this