The optical illumination of a microstrip gap on a thick semiconductor substrate creates an inhomogeneous electron-hole plasma in the gap region. This allows the study of the propagation mechanism through the plasma region. This paper uses a multilayer plasma model to explain the origin of high losses in such structures. Measured results are shown up to 50 GHz and show good agreement with the simulated multilayer model. The model also allows the estimation of certain key parameters of the plasma, such as carrier density and diffusion length, which are difficult to measure by direct means. The detailed model validation performed here will enable the design of more complex microwave structures based on this architecture. While this paper focuses on monocrystalline silicon as the substrate, the model is easily adaptable to other semiconductor materials such as GaAs.
|Number of pages||9|
|Journal||IEEE Transactions on Microwave Theory and Techniques|
|Early online date||19 Jan 2015|
|Publication status||Published - 3 Feb 2015|
- Photonics and Quantum
- Microwave photonics
- propagation in complex media
- RF microwave photonic devices
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- School of Electrical, Electronic and Mechanical Engineering - Professor of Applied Electromagnetics and Photonics
- Cabot Institute for the Environment
- The Bristol Centre for Nanoscience and Quantum Information
- Communication Systems and Networks
Person: Academic , Member