Midinfrared GaInSb/AlGaInSb quantum well laser diodes operating above 200 K

GR Nash; S Przeslak; SJ Smith; G de Valicourt; AD Andreev; PJ Carrington; M Yin; A Krier; SD Coomber; L Buckle; MT Emeny; T Ashley

doi:10.1063/1.3094879

Midinfrared GaInSb/AlGaInSb quantum well laser diodes operating above 200 K

GR Nash, S Przeslak, SJ Smith, G de Valicourt, AD Andreev, PJ Carrington, M Yin, A Krier, SD Coomber, L Buckle, MT Emeny, T Ashley

Department of Electrical & Electronic Engineering

Research output: Contribution to journal › Article (Academic Journal) › peer-review

21 Citations (Scopus)

Abstract

Electroluminescence from GaInSb/AlGaInSb type I quantum well diode lasers, grown on GaAs, has been investigated as a function of strain in the quantum wells. Lasing was observed, in pulsed operation, up to temperatures of 161, 208, 219, and 202 K for structures containing 0.55%, 0.62%, 0.78%, and 1.1% strain, respectively, with lasing occurring at ~3.3 μm at 200 K for the 1.1% structure

Translated title of the contribution	Midinfrared GaInSb/AlGaInSb quantum well laser diodes operating above 200 K
Original language	English
Pages (from-to)	091111-1 - 091111-3
Journal	Applied Physics Letters
Volume	94 (9)
DOIs	https://doi.org/10.1063/1.3094879
Publication status	Published - Mar 2009

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Publisher: American Institute of Physics

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@article{de842b32754b45dca980465f95eb4092,

title = "Midinfrared GaInSb/AlGaInSb quantum well laser diodes operating above 200 K",

abstract = "Electroluminescence from GaInSb/AlGaInSb type I quantum well diode lasers, grown on GaAs, has been investigated as a function of strain in the quantum wells. Lasing was observed, in pulsed operation, up to temperatures of 161, 208, 219, and 202 K for structures containing 0.55%, 0.62%, 0.78%, and 1.1% strain, respectively, with lasing occurring at ~3.3 μm at 200 K for the 1.1% structure",

author = "GR Nash and S Przeslak and SJ Smith and {de Valicourt}, G and AD Andreev and PJ Carrington and M Yin and A Krier and SD Coomber and L Buckle and MT Emeny and T Ashley",

note = "Publisher: American Institute of Physics",

year = "2009",

month = mar,

doi = "10.1063/1.3094879",

language = "English",

volume = "94 (9)",

pages = "091111--1 -- 091111--3",

journal = "Applied Physics Letters",

issn = "1077-3118",

publisher = "American Institute of Physics (AIP)",

}

TY - JOUR

T1 - Midinfrared GaInSb/AlGaInSb quantum well laser diodes operating above 200 K

AU - Nash, GR

AU - Przeslak, S

AU - Smith, SJ

AU - de Valicourt, G

AU - Andreev, AD

AU - Carrington, PJ

AU - Yin, M

AU - Krier, A

AU - Coomber, SD

AU - Buckle, L

AU - Emeny, MT

AU - Ashley, T

N1 - Publisher: American Institute of Physics

PY - 2009/3

Y1 - 2009/3

N2 - Electroluminescence from GaInSb/AlGaInSb type I quantum well diode lasers, grown on GaAs, has been investigated as a function of strain in the quantum wells. Lasing was observed, in pulsed operation, up to temperatures of 161, 208, 219, and 202 K for structures containing 0.55%, 0.62%, 0.78%, and 1.1% strain, respectively, with lasing occurring at ~3.3 μm at 200 K for the 1.1% structure

AB - Electroluminescence from GaInSb/AlGaInSb type I quantum well diode lasers, grown on GaAs, has been investigated as a function of strain in the quantum wells. Lasing was observed, in pulsed operation, up to temperatures of 161, 208, 219, and 202 K for structures containing 0.55%, 0.62%, 0.78%, and 1.1% strain, respectively, with lasing occurring at ~3.3 μm at 200 K for the 1.1% structure

U2 - 10.1063/1.3094879

DO - 10.1063/1.3094879

M3 - Article (Academic Journal)

SN - 1077-3118

VL - 94 (9)

SP - 091111-1 - 091111-3

JO - Applied Physics Letters

JF - Applied Physics Letters

ER -

Midinfrared GaInSb/AlGaInSb quantum well laser diodes operating above 200 K

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