Midinfrared GaInSb/AlGaInSb quantum well laser diodes operating above 200 K

GR Nash, S Przeslak, SJ Smith, G de Valicourt, AD Andreev, PJ Carrington, M Yin, A Krier, SD Coomber, L Buckle, MT Emeny, T Ashley

Research output: Contribution to journalArticle (Academic Journal)peer-review

19 Citations (Scopus)

Abstract

Electroluminescence from GaInSb/AlGaInSb type I quantum well diode lasers, grown on GaAs, has been investigated as a function of strain in the quantum wells. Lasing was observed, in pulsed operation, up to temperatures of 161, 208, 219, and 202 K for structures containing 0.55%, 0.62%, 0.78%, and 1.1% strain, respectively, with lasing occurring at ~3.3 μm at 200 K for the 1.1% structure
Translated title of the contributionMidinfrared GaInSb/AlGaInSb quantum well laser diodes operating above 200 K
Original languageEnglish
Pages (from-to)091111-1 - 091111-3
JournalApplied Physics Letters
Volume94 (9)
DOIs
Publication statusPublished - Mar 2009

Bibliographical note

Publisher: American Institute of Physics

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