Translated title of the contribution | Migration of dislocations in strained GaN heteroepitaxial layers |
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Original language | English |
Pages (from-to) | 952 - 955 |
Journal | physica status solidi (b) |
Volume | 234 |
Publication status | Published - 2002 |
Migration of dislocations in strained GaN heteroepitaxial layers
S Sahonta, MQ Baines, D Cherns, H Amano, FA Ponce
Research output: Contribution to journal › Article (Academic Journal) › peer-review
20
Citations
(Scopus)