Migration of dislocations in strained GaN heteroepitaxial layers

S Sahonta, MQ Baines, D Cherns, H Amano, FA Ponce

Research output: Contribution to journalArticle (Academic Journal)peer-review

20 Citations (Scopus)
Translated title of the contributionMigration of dislocations in strained GaN heteroepitaxial layers
Original languageEnglish
Pages (from-to)952 - 955
Journalphysica status solidi (b)
Volume234
Publication statusPublished - 2002

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